Comparison of SiO2 and Si3N4 masks for selective epitaxial growth of 3C-SiC films on Si

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 171-174

  Wu, C H ^a   Chung, J ^a   Hong, M H ^a   Zorman, C A ^a   Pirouz, P ^a   Mehregany, M ^a  

^a Case Western Reserve University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; DELAMINATION; DRY ETCHING; EPITAXIAL GROWTH; FILM GROWTH; MASKS; POLYCRYSTALLINE MATERIALS; SILICA; SILICON NITRIDE; SILICON WAFERS;

HYDROCHLORIC ACID FREE GROWTH PROCESS; SELECTIVE GROWTH; WET ETCHING;

SILICON CARBIDE;

EID: 17144440619     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)

1. S. Nishino, H. Tanaka, K. Takahashi, and J. Saraie, Amorphous and Crystalline Silicon Carbide IV, (1992) p. 411.
2. S.E. Saddow, G. Carter, G. Melnychuck, M.E. Okhuysen, M.S. Mazzola, Haibin Su, Li Jin, M. Dudley, B. Geil, T. Zheleva, K. Jones, Mater. Sci. Forum, 338-342, (2000) p. 245.
3. C.A. Zorman, A.J. Fleischman, A.S. Dewa, M. Mehregany, C. Jacob, S. Nishino, and P. Pirouz, J. Appl. Phys., 78, (1995) p. 5136.
4. C. H. Wu, C. A. Zorman, and M. Mehregany, Mater. Sci. Forum, 338-342, (2000) p. 541.
5. C. Jacob, M-H. Hong, J. Chung, P. Pirouz and S. Nishino, Mater. Sci. Forum, 338-342 (2000) p. 249.