CVD growth and characterization of 3C-SiC thin films

Bulletin of Materials Science

Volumn 27, Issue 5, 2004, Pages 445-451

  Gupta, A ^a   Paramanik, D ^b   Varma, S ^b   Jacob, C ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b INSTITUTE OF PHYSICS   (India)

Author keywords

3C SiC; CVD; HMDS; Selective epitaxy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; THERMAL EFFECTS; THERMAL EXPANSION; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACIAL DEFECTS; INVERSION DOMAIN BOUNDARIES (IDB); SELECTIVE EPITAXIAL GROWTH;

THIN FILMS;

EID: 6944247684     PISSN: 02504707     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02708562     Document Type: Article

References (13)

1. Avigal Y, Schieber M and Levin R 1974 J. Cryst. Growth 24-25 188
2. Casady J B and Johnson R W 1996 Solid State Electron. 39 1409
3. Edgar J H, Gao Y, Chaudhuri J, Cheema S, Casalnuovo S A, Yip P W and Sidorov M V 1998 J. Appl. Phys. 84 201
4. Jacob C, Wu C H, Mehregany M and Pirouz P 1996 Transactions of the 3rd international high temperature conf. (Albuquerque: NM) 1 p. II-9
5. Jacob C, Hong M H, Chung J, Pirouz P and Nishino S 2000 Mater. Sci. Forum 338-342 249
6. Jacob C, Pirouz P and Nishino S 2001 Mater. Sci. Forum 338-342 127
7. Li J P and Steckl A J 1995 J. Electrochem. Soc. 142 634
8. Morkoc H, Strite S, Gao G B, Lin M E, Sverdlov B and Burns M 1994 J. Appl. Phys. 76 1363
9. Nishino S, Powell J A and Will H A 1983 Appl. Phys. Lett. 42 460
10. Nishino S, Jacob C, Okui Y, Ohshima S and Masuda Y 2002 J. Cryst. Growth 237-239 1250
11. Parsons J D 1987 Mater. res. soc. symp. proc. (Pittsburgh, PA: MRS) 97 p. 271
12. Takahashi K, Nishino S, Saraie J and Harada K 1992 SPP amorphous and crystalline silicon carbide IV (eds) C Y Yang, M M Rahaman and G L Harris (Berlin, Heidelberg: Springer-Verlag) 71 p. 78
13. Wu C H, Jacob C, Ning X J, Nishino S and Pirouz P 1996 J. Cryst. Growth 158 480