Avalanche breakdown and breakdown luminescence in p-π-n GaN diodes

Electronics Letters

Volumn 34, Issue 7, 1998, Pages 691-692

  Osinsky, A ^a,c   Shur, M S ^b   Gaska, R ^a   Chen, Q ^a  

^a APA Optronics   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; LUMINESCENCE OF SOLIDS; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM NITRIDE PHOTODIODES;

PHOTODIODES;

EID: 0032473663     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980535     Document Type: Article

References (6)

1. OSINSKY, A., GANGOPADHYAY, S., GASKA, R., WILLIAMS, B., KHAN, MA., KUKSENKOV, D., and TEMKIN, H.: 'Low noise p-π-n GaN photodetectors', Appl. Phys. Lett., 1997, 71, (16), pp. 2334-2336
2. DMITRIEV, V.A., IRVINE, K.G., CARTER, C.H. Jr., KUZNECOV, N.I., and KALIMNA, E.V..: 'Electric breakdown in GaN p-n junctions', Appl. Phys. Lett., 1996, 68, (2), pp. 229-231
3. SHUR, M.S.: 'Physics of semiconductor devices' (Prentice Hall, NJ, 1990), p. 172
4. KOLNIK, J., OGUZMAN, I.H., BRENNAN, K.F., WANG, R., and RUDEN, P.P.: 'Monte-Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN', J. Appl. Phys., 1997, 81, (2), pp. 726-733
5. KONSTANTINOV, A.O., WAHAB, Q., NORDELL, N., and LINDERFELT, U.: 'Ionization rates and critical fields in 4H silicon carbide', Appl. Phys. Lett., 1997, 71, (1), pp. 90-92
6. OGUZMAN, I.H., BELLOTTI, E., BRENNAN, K.F., KOLNIK, J., WANG, R., and RUDEN, P.P.: 'Theory of hole impact ionization in bulk zincblande and wurtzitie GaN', J. Appl. Phys., 1997, 81, (12), pp. 7827-7824