Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 6 A, 2002, Pages 3643-3645

  Chiou, Yu Zung ^a,b   Su, Yan Kuin ^a,b   Chang, Shoou Jinn ^a,b   Chen, Jone F ^a,b   Chang, Chia Sheng ^a,b   Liu, Sen Hai ^a,b   Lin, Yi Chao ^a,b   Chen, Chin Hsiang ^a,b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b South Epitaxy Corporation   (Taiwan)

Author keywords

BST; GaN; Photodetector; TiN; UV

Indexed keywords

BARIUM COMPOUNDS; GALLIUM NITRIDE; MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SPECTROPHOTOMETERS; TITANIUM NITRIDE; TRANSPARENCY;

CONTACT ELECTRODES; ULTRAVIOLET PHOTODETECTOR;

PHOTODETECTORS;

EID: 0036614873     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.3643     Document Type: Article

References (10)