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Semiconductor Science and Technology

Volumn 14, Issue 8, 1999, Pages 685-689

Si-doped AlxGa1-xN photoconductive detectors

(8) Monroy, E a Calle, F a Garrido, J A a Youinou, P a Munoz E a Omnes F b Beaumont, B b Gibart, P b

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

b CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON TUNNELING; NITRIDES; PHOTOCONDUCTING DEVICES; PHOTOCONDUCTIVITY; PHOTOCURRENTS; RELAXATION PROCESSES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SILICON;

ALUMINUM GALLIUM NITRIDE; PHOTOCONDUCTIVE DETECTORS; THERMIONIC RELAXATION; TUNNEL RELAXATION;

ULTRAVIOLET DETECTORS;

EID: 0032667572 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/14/8/303 Document Type: Article

Times cited : (48)

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