High-temperature, high-voltage operation of pulse-doped diamond MESFET

IEEE Electron Device Letters

Volumn 18, Issue 5, 1997, Pages 222-224

  Vescan, A ^a,b   Gluche, P ^a,b   Ebert, W ^a   Kohn, E ^a,b  

^a IEEE   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

CHANNEL SHEET; POWER DENSITY;

MESFET DEVICES;

EID: 0031144159     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.568772     Document Type: Article

References (9)

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