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Electronics Letters

Volumn 36, Issue 25, 2000, Pages 2096-2098

Low-noise metal-insulator-semiconductor UV photodiodes based on GaN

(5) Monroy, E a Calle, F a Pau, J L a Munoz E a Omnes F b

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

b CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; EPITAXIAL GROWTH; MIS DEVICES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SPURIOUS SIGNAL NOISE; ULTRAVIOLET RADIATION;

DARK CURRENTS; ULTRAVIOLET PHOTODIODES;

PHOTODIODES;

EID: 0034506710 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20001441 Document Type: Article

Times cited : (24)

References (6)

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2
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3
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4
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6
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