Visible-blindness in photoconductive and photovoltaic AlGaN ultraviolet detectors

Journal of Electronic Materials

Volumn 28, Issue 3, 1999, Pages 240-245

  Monroy, E ^a   Calle, F ^a   Munoz E ^a   Omnes F ^b   Beaumont, B ^b   Gibart, P ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; LIGHT ABSORPTION; NITRIDES; PHOTOCONDUCTIVITY; PHOTOVOLTAIC EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

ALUMINUM GALLIUM NITRIDE;

ULTRAVIOLET DETECTORS;

EID: 0032634981     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0021-2     Document Type: Article

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