A study on barrier height of Au-A1xGa1 - X N schottky diodes in the range o ≤ x ≤ 0.20

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 287-294

  Khan, Mohammad Rezaul Huque ^b   Nakayama, Hisashi ^a   Detchprohm, Theeradetch ^a   Hiramatsu, Kazumasa ^a   Sawaki, Nobuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b UNIVERSITY OF CHITTAGONG   (Bangladesh)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; GOLD; METALLORGANIC VAPOR PHASE EPITAXY; OHMIC CONTACTS; SEMICONDUCTOR METAL BOUNDARIES; VOLTAGE MEASUREMENT;

CAPACITANCE VOLTAGE (CV) MEASUREMENT; SPATIAL INHOMOGENEITIES;

SCHOTTKY BARRIER DIODES;

EID: 0031075943     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00231-6     Document Type: Article

References (33)

1. T. Detchprohm, T. Takeuchi, H. Amano, K. Hiramatsu and I. Akasaki, 10th Symp. Record of Alloy Semiconductor Physics and Electronics (ASPECs-10), p. 121. 18-19 July 1991, Nagoya, Japan.
2. K. Naniwae, S. Itoh, K. Itoh, K. Hiramatsu and I. Akasaki, J. Crystal Growth 99, 381 (1990).
3. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu and N. Sawaki, J. Crystal Growth 98, 209 (1989).
4. M. R. H. Khan, H. Nakayama, T. Detchprohm, K. Hiramatsu and N. Sawaki, Solid-St. Electron. (in press).
5. H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).
6. S. R. Frost, Heterojunction Band Discontinuities Physics and Devices (Edited by F. Capasso and G. Margaritondo), p. 359. North Holland, Amsterdam (1987).
7. J. H. Werner, Appl. Phys. A47, 291 (1988).
8. M. R. H. Khan, T. Detchprohm, P. Hacke, K. Hiramatsu and N. Sawaki, J. Phys. D: Appl. Phys. 28, 1169 (1995).
9. J. H. Werner, Metallization and Metal-Semiconductor Interfaces (Edited by I. P. Batra), p. 235. Plenum, New York (1989).
10. H. C. Card and E. H. Rhoderick, J. Phys. D4, 1589 (1971).
11. J. H. Werner, K. Ploog and H. J. Queisser. Phys. Rev. Lett. 57, 1080 (1986).
12. J. H. Werner, A. F. J. Levi, R. T. Tung, M. Anzlowar and M. Pinto, Phys. Rev. Lett. 60, 53 (1988).
13. E. H. Rhoderick and R. W. Williams, Metal-Semiconductor Contacts, 2nd edn, p. 113. Clarendon, Oxford (1978).
14. R. F. Broom, H. P. Meir and W. Walter, J. Appl. Phys. 60, 1833 (1986).
15. V. L. Rideout and C. R. Crowell, Solid-St. Electron. 13, 993 (1970).
16. E. H. Rhoderick and R. W. Williams, Metal Semiconductor Contacts, 2nd edn, p. 118. Clarendon, Oxford (1978).
17. M. S. Tyagi, Metal-Semiconductor Shcottky Barrier Junctions and their Application (Edited by B. L. Sharama), p. 48. Plenum, New York (1984).
18. A. N. Saxana, Sur. Sci. 13, 151 (1969).
19. G. S. Viweswaran and R. Sharan, Proc. IEEE 67, 436 (1979).
20. C. R. Crowell and S. M. Sze, Appl. Phys. Lett. 4, 91 (1964).
21. T. Arizumi and M. Hirose, Jpn. J. Appl. Phys. 8, 749 (1969).
22. A. M. Cowley, Solid-St. Electron. 13, 403 (1970).
23. A. M. Cowley and R. A. Zettler, IEEE Trans. Electron Devices ED-15, 761 (1968).
24. J. H. Werner and H. H. Guttler, J. Appl. Phys. 69, 1522 (1991).
25. S. M. Sze, Physics of Semiconductors, p. 17. Wiley, New York (1981).
26. B. B. Kosicki, R. J. Powell and J. E. Bergiel, Phys. Rev. Lett. 24, 1421 (1970).
27. H. B. Michaelson, Handbook of Chemistry and Physics, 58th edn (Edited by R. C. C. Weast), p. E81. CRC, Cleveland, OH.
28. Semiconductors of Group IV Elements and III-V Compounds (Edited by O. Madelung), p. 89. Springer, Berlin (1991).
29. R. R. Senechal and J. Basinski, J. Appl. Phys. 39, 3723 (1968).
30. M. R. H. Khan, Y. Koide, N. Sawaki and I. Akasaki, Solid State Commun. 60, 509 (1986).
31. E. H. Rhoderick and R. W. Williams, Metal-Semiconductor Contacts, p. 121. Clarendon, Oxford (1978).
32. S. R. Frost, Heterojunction Band Discontinuities Physics and Device Applications (Edited by F. Capasso and G. Margaritondo), p. 331. North Holland, Amsterdam (1987).
33. R. T. Tung, A. F. J. Levi, J. P. Sullivan and F. Schery, Phys. Rev. Lett. 66, 72 (1991).