Properties of Si donors and persistent photoconductivity in AlGaN

Solid-State Electronics

Volumn 42, Issue 4, 1998, Pages 627-635

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Mil'vidskii, M G ^a   Redwing, J M ^b   Shin, M ^c   Skowronski, M ^c   Greve, D W ^c   Wilson, R G ^d  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b Advanced Technology Materials Inc   (United States)

^c CARNEGIE MELLON UNIVERSITY   (United States)

^d Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON TRAPS; IONIZATION; PHOTOCONDUCTIVITY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

ALUMINUM GALLIUM NITRIDE; IONIZATION ENERGY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032045119     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00277-3     Document Type: Article

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