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Volumn 17, Issue 9, 2002, Pages

Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N

(11) Monroy, E a Calle, F a Ranchal, R a Palacios, T a Verdu M b Sanchez F J b Montojo, M T b Eickhoff, M c Omnes F d Bougrioua, Z e Moerman, I e

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

b DEPT OF ENVIRONMENTAL CHEMISTRY (Spain)

c WALTER SCHOTTKY INSTITUT (Germany)

d CRHEA CNRS (France)

e GHENT UNIVERSITY (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; THERMODYNAMIC STABILITY;

THERMAL AGEING;

SCHOTTKY BARRIER DIODES;

EID: 18544371655 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/9/103 Document Type: Article

Times cited : (39)

References (34)

1
- 0032620953
- (1999) Appl. Phys. Lett. , vol.74 , pp. 3401
- Monroy, E.¹ Calle, F.² Muñoz, E.³ Omnès, F.⁴

2
- 0000835981
- (1999) Appl. Phys. Lett. , vol.74 , pp. 762
- Walker, D.¹ Monroy, E.² Kung, P.³ Hamilton, M.⁴ Sánchez, F.J.⁵ Díaz, J.⁶ Razeghi, M.⁷

3
- 0035279816
- (2001) IEEE Trans. Electron Devices , vol.48 , pp. 479
- Eastman, L.F.¹ Tilak, V.² Smart, J.³ Green, B.M.⁴ Chumbes, E.M.⁵ Dimitrov, R.⁶ Hyungtak, K.⁷ Ambacher, O.S.⁸ Weimann, N.⁹ Prunty, T.¹⁰ Murphy, M.¹¹ Schaff, W.J.¹² Shealy, J.R.¹³

4
- 0035279282
- (2001) IEEE Trans. Electron Devices , vol.48 , pp. 552
- Keller, S.¹ Yi-Feng, W.² Parish, G.³ Naiqian, Z.⁴ Xu, J.J.⁵ Keller, B.P.⁶ Denbaars, S.P.⁷ Mishra, U.K.⁸

5
- 0031548617
- (1997) Appl. Surf. Sci. , vol.117-118 , pp. 388
- Kampen, T.U.¹ Mönch, W.²

6
- 3242869524
- (1996) Electron. Lett. , vol.32 , pp. 1832
- Smitz, A.C.¹ Ping, A.T.² Khan, M.A.³ Chen, Q.⁴ Yang, J.W.⁵ Adesida, I.⁶

7
- 0001033862
- (2000) Japan. J. Appl. Phys. , vol.39
- Arulkumaran, S.¹ Egawa, T.² Zhao, G.-Y.³ Ishikawa, H.⁴ Jimbo, T.⁵ Umeno, M.⁶

8
- 0038589745
- (1999) Microelectron. Reliab. , vol.39 , pp. 1737
- Würfl, J.¹ Abrosimova, V.² Hilsenbeck, J.³ Nebauer, E.⁴ Rieger, W.⁵ Tränkle, G.⁶

9
- 0001181554
- (1996) J. Appl. Phys. , vol.80 , pp. 1623
- Guo, J.D.¹ Pan, F.M.² Feng, M.S.³ Guo, R.J.⁴ Chou, P.F.⁵ Chang, C.Y.⁶

10
- 0000165569
- (1996) J. Appl. Phys. , vol.81 , pp. 3134
- Duxstad, K.J.¹ Haller, E.E.² Yu, K.M.³

11
- 0035278833
- (2001) IEEE Trans. Electron Devices , vol.48 , pp. 573
- Arulkumaran, S.¹ Egawa, T.² Ishikawa, H.³ Umeno, M.⁴ Jimbo, T.⁵

12
- 0000050128
- (1998) J. Appl. Phys. , vol.84 , pp. 881
- Lin, Q.Z.¹ Yu, L.S.² Deng, F.³ Lau, S.S.⁴ Redwing, J.M.⁵

13
- 0000739940
- (1997) J. Appl. Phys. , vol.82 , pp. 650
- Venugopalan, H.S.¹ Mohney, S.E.² Luther, B.P.³ Wolter, S.D.⁴ Redwing, J.M.⁵

14
- 0033189904
- (1999) Semicond. Sci. Technol. , vol.14 , pp. 757
- Venugopalan, H.S.¹ Mohney, S.E.² Delucca, J.M.³ Molnar, R.J.⁴

15
- 0035278799
- (2001) IEEE Trans. Electron Devices , vol.48 , pp. 465
- Binari, S.C.¹ Ikossi, K.² Roussos, J.A.³ Kruppa, W.⁴ Park, D.⁵ Dietrich, B.⁶ Koleske, D.D.⁷ Wickenden, A.E.⁸ Henry, R.L.⁹

16
- 0001209375
- (2000) Appl. Phys. Lett. , vol.77 , pp. 863
- Adivarahan, V.¹ Simin, G.² Yang, J.W.³ Lunev, A.⁴ Kahn, M.A.⁵ Pala, N.⁶ Shur, M.⁷ Gasca, R.⁸

17
- 0033738001
- (2000) IEEE Electron Devices Lett. , vol.21 , pp. 268
- Green, B.M.¹ Chu, K.K.² Chumbes, E.M.³ Smart, J.A.⁴ Shealy, J.R.⁵ Eastman, L.F.⁶

18
- 0035278804
- (2001) IEEE Trans. Electron Devices , vol.48 , pp. 560
- Ventury, R.¹ Zhang, N.Q.² Keller, S.³ Mishra, U.K.⁴

19
- 0000520868
- (1999) J. Appl. Phys. , vol.86 , pp. 5286
- Omnès, F.¹ Marenco, N.² Beaumont, B.³ De Mierry Ph Monroy, E.⁴ Calle, F.⁵ Muñoz, E.⁶

20
- 0035451530
- (2001) J. Cryst. Growth , vol.230 , pp. 743
- Bougrioua, Z.¹ Moerman, I.² Sharma, N.³ Wallis, R.H.⁴ Cheyns, J.⁵ Jacobs, K.⁶ Thrush, E.J.⁷ Considine, L.⁸ Beanland, R.⁹ Farvacque, J.¹⁰ Humphreys, C.¹¹

21
- 0000610808
- (1996) Appl. Phys. Lett. , vol.68 , pp. 1267
- Wang, L.¹ Nathan, M.I.² Lim, T.-H.³ Khan, M.A.⁴ Chen, Q.⁵

22
- 3843077657
- (1996) J. Mater Res. , vol.2 , pp. 441
- Chang, C.-A.¹

23
- 3242825916
- (1999) J. Appl. Phys. , vol.86 , pp. 3826
- Chen, L.-C.¹ Chen, F.-R.² Kai, J.-J.³ Chang, L.⁴ Ho, J.-K.⁵ Jong, C.-S.⁶ Chiu, C.C.⁷ Huang, C.-N.⁸ Chen, C.-Y.⁹ Shih, K.-K.¹⁰

24
- 0035938335
- (2001) Appl. Phys. Lett. , vol.78 , pp. 2503
- Grabowski, S.P.¹ Schneider, M.² Nienhaus, H.³ Mönch, W.⁴ Dimitrov, R.⁵ Ambacher, O.⁶ Stutzmann, M.⁷

25
- 0001331365
- (2000) J. Appl. Phys. , vol.88 , pp. 2081
- Monroy, E.¹ Calle, F.² Pau, J.L.³ Sánchez, F.J.⁴ Muñoz, E.⁵ Omnès, F.⁶ Beaumont, B.⁷ Gibart, P.⁸

26
- 0002007655
- (1998) MRS Internet J. Nitride Semicond. Res. , vol.3 , pp. 37
- Polyakov, A.Y.¹ Smimov, N.B.² Govorkov, A.V.³ Grevem, D.W.⁴ Skowronski, M.⁵ Shin, M.⁶ Redwing, J.M.⁷

27
- 0031075943
- (1997) Solid-State Electron. , vol.41 , pp. 287
- Khan, M.R.H.¹ Nakayama, H.² Detchprohm, T.³ Hiramatsu, K.⁴ Sawaki, N.⁵

28
- 0001142431
- (1998) Appl. Phys. Lett. , vol.73 , pp. 238
- Yu, L.S.¹ Qiao, D.J.² Xing, Q.J.³ Lau, S.S.⁴ Boutros, K.S.⁵ Redwing, J.M.⁶

29
- 0035875544
- (2001) J. Appl. Phys. , vol.89 , pp. 7777
- Hu, X.¹ Cahill, D.G.² Averback, R.S.³

30
- 0000004371
- (1960) J. Appl. Phys. , vol.31 , pp. 562
- Belser, R.¹

31
- 0002324218
- (2001) Phys. Status Solidi a , vol.185 , pp. 39
- Schalwig, J.¹ Müller, G.² Ambacher, O.³ Stutzmann, M.⁴

32
- 0004277486
- New York: Wiley
- (1982) MOS Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

33
- 0000266350
- (1996) Appl. Phys. Lett. , vol.68 , pp. 1850
- Casey H.C., Jr.¹ Fountain, G.G.² Alley, R.G.³ Keller, B.P.⁴ Denbaars, S.P.⁵

34
- 21944449679
- (1998) Appl. Phys. Lett. , vol.73 , pp. 809
- Arulkumaran, S.¹ Egawa, T.² Ishikawa, H.³ Jimbo, T.⁴ Umeno, M.⁵

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