GaN avalanche photodiodes operating in linear-gain mode and Geiger mode

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 502-511

  Verghese, Simon ^a,b,c   Mc Intosh, K A ^b   Molnar, Richard J ^b   Mahoney, Leonard J ^b   Aggarwal, Roshan L ^b   Geis, Michael W ^b   Molvar, Karen M ^b   Duerr, Eric K ^a,b   Melngailis, Ivars ^a,b  

^a IEEE   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c PhotonEx Corporation   (United States)

Author keywords

Avalanche photodiodes; Gallium nitride materials devices

Indexed keywords

AVALANCHE DIODES; CAPACITANCE MEASUREMENT; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; ULTRAVIOLET DETECTORS; VAPOR PHASE EPITAXY; VOLTAGE MEASUREMENT; ZINC;

ALUMINUM GALLIUM NITRIDE; AVALANCHE PHOTODIODES; GEIGER MODE; PHOTOMULTIPLIER TUBES; SOLAR BLIND;

PHOTODIODES;

EID: 0035278796     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906443     Document Type: Article

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