Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE

Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 307-310

  Flannery, L B ^a   Harrison, I ^a   Lacklison, D E ^a   Dykeman, R I ^a   Cheng, T S ^a   Foxon, C T ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

GaN; Hole concentration; Mobility; Photoconductors

Indexed keywords

CARRIER CONCENTRATION; EXCITONS; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTING MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR METAL BOUNDARIES;

GALLIUM NITRIDE; METAL SEMICONDUCTOR METAL (MSM) STRUCTURES;

ULTRAVIOLET DETECTORS;

EID: 0002496739     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00195-5     Document Type: Article

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