Growth and characterization of phosphorus doped n-type diamond thin films

Diamond and Related Materials

Volumn 7, Issue 2-5, 1998, Pages 540-544

  Koizumi, S ^a   Kamo, M ^a   Sato, Y ^a   Mita, S ^b   Sawabe, A ^b   Reznik, A ^c   Uzan Saguy, C ^c   Kalish, R ^c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b AOYAMA GAKUIN UNIVERSITY   (Japan)

^c TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Doping n type; Electrical properties; Homoepitaxy; Phosphorous

Indexed keywords

DOPING (ADDITIVES); ELECTRIC PROPERTIES; PHOSPHORUS; SEMICONDUCTOR MATERIALS; THIN FILMS;

HOMOEPITAXY;

DIAMOND FILMS;

EID: 0031996360     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(97)00250-1     Document Type: Article

References (11)

1. A.T. Collins, E.C. Lightowlers, in: J.E. Field (Ed.), The Properties of Diamond, Chap. 3, Academic Press, London, 1979, pp. 79-105.
2. V.S. Vavilov, M.I. Guseva, E.A. Konorova, V.F. Sergienko, Sov. Phys. Semicond. 4 (1970) 6.
3. S. Prawer, C. Uzan-Saguy, G. Braunstein, K. Kalish, Appl. Phys. Lett. 63 (1993) 2502.
4. J.F. Prins, Phys. Rev. B. 31 (1985) 2472.
5. M. Kamo, H. Yurimoto, T. Ando, Y. Sato, in: R. Messier, J.T. Glass, J.E. Butler, R. Roy (Eds.), Proceedings of the 2nd International Conference on New Diamond Science and Technology, Materials Research Society, PA, 1991, p. 637.
6. K. Okano, H. Kiyota, T. Iwasaki, Y. Nakamura, Y. Akiba, T. Kurosu, M. Iida, T. Nakamura, Appl. Phys. A. 51 (1990) 334.
7. A.E. Alexenko, B.V. Spitsyn, Diamond Relat. Mater. 1 (1992) 705.
8. T. Ando, H. Haneda, M. Akaishi, Y. Sato, M. Kamo, Diamond Relat. Mater. 5 (1996) 34.
9. M. Kamo, Y. Sato, S. Matsumoto, N. Setaka, J. Cryst. Growth. 62 (1983) 642.
10. S.A. Kajiwara, A. Antonelli, J. Bernholc, R. Car, Phys. Rev. Lett. 15 (1991) 2010.
11. L.S. Pan, S. Han, D.R. Kania, K. Okano, Diamond Films Technol. 2 (1992) 99.