High Performance Solar Blind Detectors Based on AlGaN Grown by MBE on Si

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 325-328

  Duboz, J Y ^a   Reverchon, J L ^a   Adam, D ^a   Damilano, B ^b   Semond, F ^b   Grandjean, N ^b   Massies, J ^b  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013247449     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<325::AID-PSSA325>3.0.CO;2-T     Document Type: Article

References (4)

1. B. GIL, Group III Nitride Semiconductor Compounds: Physics and Applications, Clarendon Press, Oxford 1998.
2. J. D. BROWN, J. BONEY, J. MATTHEWS, P. SRINIVASAN, J. F. SCHETZINA, T. NOHAVA, W. YANG, and S. KRISHNANKUTTY, MRS Internet J. Nitride Semicond. Res. 5, 6 (2000).
3. N. GRANDJEAN and J. MASSIES, Appl. Phys. Lett. 71, 1816 (1997).
4. F. SEMOND, P. LORENZINI, N. GRANDJEAN, and J. MASSIES, Appl. Phys. Lett. 78, 335 (2001).