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Volumn 76, Issue 11, 2000, Pages 1431-1433

Thermally activated electrical conductivity in thin GaN epitaxial films

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[No Author keywords available]

Indexed keywords


EID: 0001196667     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126054     Document Type: Article
Times cited : (19)

References (26)
  • 23
    • 0003412161 scopus 로고
    • Pergamon, New York
    • The number of defects per ion, per unit depth was obtained by the simulation code TRIM, see J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping Range of Ions in Solids (Pergamon, New York, 1985). The fraction of these defects that are electrically active was calculated self-consistently by fitting the resistivity vs dose curves, as in Ref. 19.
    • (1985) The Stopping Range of Ions in Solids
    • Ziegler, J.F.1    Biersack, J.P.2    Littmark, U.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.