ZnSTe-based Schottky barrier ultraviolet detectors with nanosecond response time

Applied Physics Letters

Volumn 73, Issue 16, 1998, Pages 2251-2253

  Ma, Z H ^a   Sou, I K ^a   Wong, K S ^a   Yang, Z ^a   Wong, G K L ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC VARIABLES MEASUREMENT; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; QUANTUM THEORY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; ULTRAVIOLET DETECTORS;

EXTERNAL QUANTUM EFFICIENCY; NANOSECOND RESPONSE TIME; RESISTANCE CAPACITANCE CONSTANT; TEMPORAL PHOTOCURRENT RESPONSE; ZINC SULFUR TELLURIDE;

SCHOTTKY BARRIER DIODES;

EID: 0032547658     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121692     Document Type: Article

References (7)

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