Negative electron affinity of cesiated p-GaN(0001) surfaces

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 4, 1998, Pages 2224-2228

  Eyckeler, M ^a   Monch W ^a   Kampen, T U ^b   Dimitrov, R ^c   Ambacher, O ^c   Stutzmann, M ^c  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^c WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001265540     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590152     Document Type: Article

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