High detectivity ZnSe-based Schottky barrier photodetectors for blue and near-ultraviolet spectral range

Electronics Letters

Volumn 36, Issue 9, 2000, Pages 826-827

  Vigue F ^a   De Mierry, P ^a   Faurie, J P ^a   Monroy, E ^b   Calle, F ^b   Munoz E ^b  

^a CRHEA CNRS   (France)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; REACTIVE ION ETCHING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; SOLDERING; SUBSTRATES; ULTRAVIOLET SPECTROSCOPY;

INDIUM DOT; NEAR ULTRAVIOLET SPECTRAL RANGE; SCHOTTKY BARRIER PHOTODETECTORS; ZINC SELENIDE;

ULTRAVIOLET DETECTORS;

EID: 0033750599     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000600     Document Type: Article

References (9)

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