Demonstration of blue-ultraviolet avalanche photo-diodes of II-VI wide bandgap compounds grown by MBE

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 1134-1137

  Abe, Tomoki ^a   Ishikura, Hitoshi ^a   Fukuda, Nariyuki ^a   Aung, Zaw Min ^a   Adachi, Masahiro ^a   Kasada, Hirofumi ^a   Ando, Koshi ^a  

^a TOTTORI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; ELECTRIC POTENTIAL; ETCHING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; TEMPERATURE; ULTRAVIOLET DETECTORS;

AVALANCHE GAIN; BLUE ULTRAVIOLET AVALANCHE PHOTODIODES; CRYSTAL QUALITY; MESA ETCHING TECHNOLOGY; REVERSE BIAS;

PHOTODIODES;

EID: 0033727163     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00289-X     Document Type: Article

References (6)

1. H. Okuyama S. Itoh E. Katoh M. Ozawa N. Nakayama K. Nakano M. Ikeda A. Ishibashi M. Mori Electron. Lett. 30 1994 1488
2. S. Nakamura M. Senoh S. Nagahama N. Iwasa T. Iwasa T. Yamada T. Matsushita H. Kiyoku Y. Sugimoto Jpn. J. Appl. Phys. 35 1996 L217
3. S. Nakamura Electron. Commun. Jpn. 2, Electron (USA) 81 1998 1
4. H. Ishikura, N. Fukuda, Y. Okuno, K. Gotoh, S. Kawamoto, T. Shirai, T. Abe, H. Kasada, K. Ando, Proceedings of the Second International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, September 29–October 2, 1998, p. 677.
5. M. Ehinger C. Koch M. Korn D. Albert J. Nurnberger V. Hock W. Faschinger G. Landwehr Appl. Phys. Lett. 73 1998 3562
6. T. Abe H. Ishikura Y. Saomoto K. Goto K. Masuda T. Shirai H. Yamada S. Kuroda H. Kasada K. Ando J. Crystal Growth 214/215 2000 492