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Diamond and Related Materials

Volumn 7, Issue 9, 1998, Pages 1390-1393

Activation energy in low compensated homoepitaxial boron-doped diamond films

(3) Lagrange, J P a Deneuville, A a Gheeraert, E a

a LABORATOIRE DE CRISTALLOGRAPHIE (France)

Author keywords

Boron doping; Doping; Electrical properties; Homoepitaxy

Indexed keywords

ACTIVATION ENERGY; BORON COMPOUNDS; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; SEMICONDUCTOR DOPING; SYNTHETIC DIAMONDS; THIN FILMS;

DIAMOND SUBSTRATES; HOMOEPITAXY;

DIAMOND FILMS;

EID: 0032163695 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-9635(98)00225-8 Document Type: Article

Times cited : (191)

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