Wide bandgap semiconductor materials and devices

IEEE Transactions on Electron Devices

Volumn 43, Issue 10, 1996, Pages 1633-1636

  Yoder, Max N ^a  

^a OFFICE OF NAVAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSPORT PROPERTIES; PHOTOEMISSION; SEMICONDUCTOR DEVICES;

WIDE BANDGAP SEMICONDUCTORS;

SEMICONDUCTOR MATERIALS;

EID: 0030270947     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.536807     Document Type: Article

References (16)

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