Defect density in ZnSe pseudomorphic layers grown by molecular beam epitaxy on to various GaAs buffer layers

Journal of Crystal Growth

Volumn 192, Issue 1-2, 1998, Pages 102-108

  Bousquet, V ^a   Tournie E ^a   Faurie, J P ^a  

^a CRHEA CNRS   (France)

Author keywords

Defect density; MBE; ZnSe

Indexed keywords

ATOMIC FORCE MICROSCOPY; BERYLLIUM COMPOUNDS; CRYSTAL DEFECTS; LOW TEMPERATURE EFFECTS; MORPHOLOGY; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; STOICHIOMETRY; SURFACE ROUGHNESS; THIN FILMS;

BUFFER LAYER; DEFECT DENSITY; MIGRATION ENHANCED EPITAXY; ZINC SELENIDE PSEUDOMORPHIC LAYER;

MOLECULAR BEAM EPITAXY;

EID: 0032475005     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00447-3     Document Type: Article

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