Low dark current pin ultraviolet photodetectors fabricated on GaN grown by metal organic chemical vapour deposition

Electronics Letters

Volumn 34, Issue 7, 1998, Pages 692-694

  Carrano, J C ^a   Li, T ^a   Grudowski, P A ^a   Eiting, C J ^a   Lambert, D ^a   Schaub, J D ^a   Dupuis, R D ^a   Campbell, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

LOW DARK CURRENT PIN ULTRAVIOLET PHOTODETECTORS;

ULTRAVIOLET DETECTORS;

EID: 0032473617     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980453     Document Type: Article

References (4)

1. XU, G.Y., SALVADOR, A., KIM, W., FAN, Z., LU, C., TANG, H., MORKOC, H., SMITH, G., ESTES, M., GOLDENBURG, B., YANG, W., and KRISHNANKUTTY, S.: 'High-speed, low noise ultaviolet photodetectors based on GaN pin and AlGaN(p)-GaN(i)-GaN(n) structures', Appl. Phys. Lett., 1997, 71, pp. 2154-2156
2. OSINSKY, A., GANGOPADHYAY, S., GASKA, R., WILLIAMS, B., KHAN, M.A., KULSENKOV, D., and TEMKIN, H.: 'Low noise p-π-p GaN ultraviolet photodetectors', Appl. Phys. Lett., 1997, 71, pp. 2334-2336
3. VAN HOVE, J.M., HICKMAN, R., KLASSEN, J.J., CHOW, P.P., and RUDEN, P.P.: 'Ultraviolet-sensitive, visible-blind GaN photodetectors fabricated by molecular beam epitaxy', Appl. Phys. Lett., 1997, 70, pp. 2282-2284
4. DMITRIEV, V.A., IRVINE, K.G., CARTER, C.H., Jr., KUZNETSOV, N.I., and KALININA, E.V.: 'Electric breakdown in GaN p-n junctions', Appl. Phys. Lett., 1996, 68, pp. 229-231