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Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 466, Issue 2, 2001, Pages 406-411

Silicon carbide: Fundamentals

(1) Iwami, Motohiro a

a OKAYAMA UNIVERSITY (Japan)

Author keywords

Diodes; Physical properties; SiC crystals; Transistors

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL LATTICES; DOPING (ADDITIVES); IMPURITIES; INTERFACES (MATERIALS); LIQUID PHASE EPITAXY; RELAXATION PROCESSES; SILICON CARBIDE;

HETERO-EPITAXIAL GROWTH;

PARTICLE DETECTORS;

EID: 0035398217 PISSN: 01689002 EISSN: None Source Type: Journal
DOI: 10.1016/S0168-9002(01)00601-5 Document Type: Conference Paper

Times cited : (34)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.