Experimental evaluation of impact ionization coefficients in GaN

IEEE Electron Device Letters

Volumn 20, Issue 12, 1999, Pages 608-610

  Kunihiro, Kazuaki ^a   Kasahara, Kensuke ^a   Takahashi, Yuji ^a   Ohno, Yasuo ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HETEROJUNCTIONS; IONIZATION OF SOLIDS; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM COMPOUNDS;

HETEROJUNCTION FIELD EFFECT TRANSISTORS (HJFET);

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0033314799     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.806100     Document Type: Article

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