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Journal of Crystal Growth

Volumn 223, Issue 4, 2001, Pages 461-465

Wide-band-gap ZnMgBeSe alloys grown onto GaAs by molecular beam epitaxy

(4) Tournie E a Vigue F a Laugt M a Faurie, J P a

a CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ENERGY GAP; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS; ZINC ALLOYS;

ZINC MAGNESIUM BERYLLIUM SELENIDES;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0035278567 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00621-2 Document Type: Article

Times cited : (11)

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