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Denver, CO, Oct. a pulsed KrF laser at 193 nm was used. The PC decay result was similar to that reported here except that for highly conducting n-type GaN samples negative photoconductivity was observed with KrF laser
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In our earlier work, C. H. Qiu, C. Hoggatt, Z. Zhang, M. W. Leksono, and J. I. Pankove, presented at the 41st National AVS meeting, Denver, CO, Oct. 1994, a pulsed KrF laser at 193 nm was used. The PC decay result was similar to that reported here except that for highly conducting n-type GaN samples negative photoconductivity was observed with KrF laser.
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