Experimental demonstration of a buried-channel charge-coupled device in 6H silicon carbide

IEEE Electron Device Letters

Volumn 17, Issue 1, 1996, Pages 4-6

  Sheppard, S T ^b   Melloch, M R ^a,b   Cooper Jr , J A ^a,b  

^a IEEE

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ION IMPLANTATION; MOS DEVICES; SHIFT REGISTERS; SILICON CARBIDE; THERMAL EFFECTS;

BURIED CHANNEL CHARGE COUPLED DEVICE; DOUBLE LEVEL OVERLAPPING POLYSILICON GATE; ELECTRON MOBILITY;

CHARGE COUPLED DEVICES;

EID: 0029778599     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.475559     Document Type: Article

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