Properties of a photovoltaic detector based on an n-type GaN Schottky barrier

Journal of Applied Physics

Volumn 81, Issue 9, 1997, Pages 6449-6454

  Binet, F ^a   Duboz, J Y ^a   Laurent, N ^a   Rosencher, E ^a   Briot, O ^b   Aulombard, R L ^b  

^a THALES   (France)

^b UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001126148     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364427     Document Type: Article

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