SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors

Applied Physics Letters

Volumn 77, Issue 6, 2000, Pages 863-865

  Adivarahan, V ^a   Simin, G ^a   Yang, J W ^a   Lunev, A ^a   Asif Khan, M ^a   Pala, N ^b   Shur, M ^b   Gaska, R ^b  

^a UNIVERSITY OF SOUTH CAROLINA   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001209375     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1306647     Document Type: Article

References (8)

1. M. Razeghi and A. Rogalski, J. Appl. Phys. 79, 7433 (1996).
2. D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F. J. Sanchez, J. Diaz, and M. Razeghi, Appl. Phys. Lett. 74, 762 (1998).
3. J. C. Carrano, P. A. Grudowski, C. J. Eiting, R. D. Dupuis, and J. C. Campbell, Appl. Phys. Lett. 70, 1992 (1997).
4. Q. Chen, J. W. Yang, A. Osinsky, S. Gangopadhyay, B. Lim, M. Z. Anwar, M. Asif Khan, D. Kuksenkov, and H. Temkin, Appl. Phys. Lett. 70, 2277 (1997).
5. M. Asif Khan, X. Hu, G. Simin, A. Lunev, J. Yang, R. Gaska, and M. S. Shur, IEEE Electron Device Lett. 21, 63 (2000).
6. M. Asif Khan, X. Hu, G. Simin, J. Yang, R. Gaska, and M. S. Shur (unpublished).
7. S. Rumyantsev, M. E. Levinshtein, R. Gaska, M. S. Shur, J. W. Yang, and M. A. Khan, J. Appl. Phys. 87, 1849 (2000).
8. N. Pala, R. Gaska, S. Rumyantsev, M. S. Shur, M. Asif Khan, X. Hu, G. Simin, and J. Yang, Electron. Lett. 36, 268 (2000).