Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment

Applied Physics Letters

Volumn 82, Issue 8, 2003, Pages 1293-1295

  Miller, E J ^a   Schaadt, D M ^a   Yu, E T ^a   Waltereit, P ^b   Poblenz, C ^b   Speck, J S ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMISTRY; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE TREATMENT;

REVERSE BIAS;

SCHOTTKY BARRIER DIODES;

EID: 0037463260     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1554484     Document Type: Article

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