메뉴 건너뛰기




Volumn 9780521865388, Issue , 2006, Pages 1-422

Light-emitting diodes, second edition

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMISSION; PACKAGING MATERIALS; REFLECTION; STUDENTS; TEXTBOOKS;

EID: 84923620471     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1017/CBO9780511790546     Document Type: Book
Times cited : (174)

References (610)
  • 2
    • 49749210053 scopus 로고
    • Electroluminescent devices using carrier injection in gallium phosphide
    • Allen J. W., Moncaster M. E., and Starkiewicz J. "Electroluminescent devices using carrier injection in gallium phosphide" Solid State Electronics 6, 95 (1963)
    • (1963) Solid State Electronics , vol.6 , pp. 95
    • Allen, J.W.1    Moncaster, M.E.2    Starkiewicz, J.3
  • 3
    • 84883188181 scopus 로고
    • P-type conduction in Mg-doped GaN treated with lowenergy electron beam irradiation (LEEBI)
    • Amano H., Kito M., Hiramatsu K., Akasaki I. "P-type conduction in Mg-doped GaN treated with lowenergy electron beam irradiation (LEEBI)" Jpn. J. Appl. Phys. 28, L2112 (1989)
    • (1989) Jpn. J. Appl. Phys , vol.28
    • Amano, H.1    Kito, M.2    Hiramatsu, K.3    Akasaki, I.4
  • 5
    • 0032098531 scopus 로고    scopus 로고
    • AlGaInP-GaInP compressively strained multiquantum well light-emitting diodes for polymer fiber applications
    • Chang S. J. and Chang C. S. "AlGaInP-GaInP compressively strained multiquantum well light-emitting diodes for polymer fiber applications" IEEE Photonics Technol. Lett. 10, 772 (1998a)
    • (1998) IEEE Photonics Technol. Lett , vol.10 , pp. 772
    • Chang, S.J.1    Chang, C.S.2
  • 6
    • 0032093810 scopus 로고    scopus 로고
    • 650 nm AlGaInP/GaInP compressively strained multi-quantum well lightemitting diodes
    • Chang S. J. and Chang C. S. "650 nm AlGaInP/GaInP compressively strained multi-quantum well lightemitting diodes" Jpn. J. Appl. Phys 37, L653 (1998b)
    • (1998) Jpn. J. Appl. Phys , vol.37
    • Chang, S.J.1    Chang, C.S.2
  • 7
    • 0015416091 scopus 로고
    • Radiative recombination mechanisms in GaAsP diodes with and without nitrogen doping
    • Craford M. G., Shaw R. W., Herzog A. H., and Groves W. O. "Radiative recombination mechanisms in GaAsP diodes with and without nitrogen doping" J. Appl. Phys. 43, 4075 (1972)
    • (1972) J. Appl. Phys , vol.43 , pp. 4075
    • Craford, M.G.1    Shaw, R.W.2    Herzog, A.H.3    Groves, W.O.4
  • 8
    • 0000012371 scopus 로고
    • Scintillations of zinc sulfides with alpha-rays
    • Destriau G. "Scintillations of zinc sulfides with alpha-rays" J. Chimie Physique 33, 587 (1936)
    • (1936) J. Chimie Physique , vol.33 , pp. 587
    • Destriau, G.1
  • 9
    • 77956716473 scopus 로고
    • Advances in light-emitting diodes
    • December issue
    • Duke C. B. and Holonyak Jr. N. "Advances in light-emitting diodes" Physics Today, December issue, p. 23 (1973)
    • (1973) Physics Today , pp. 23
    • Duke, C.B.1    Holonyak, N.2
  • 10
    • 50549211273 scopus 로고
    • Injection electroluminescence in metal-semiconductor tunnel diodes
    • Eastman P. C., Haering R. R., and Barnes P. A. "Injection electroluminescence in metal-semiconductor tunnel diodes" Solid-State Electronics 7, 879 (1964)
    • (1964) Solid-State Electronics , vol.7 , pp. 879
    • Eastman, P.C.1    Haering, R.R.2    Barnes, P.A.3
  • 11
    • 0027577002 scopus 로고
    • Blue LEDs, UV photodiodes and high-temperature rectifiers in 6 H-SiC
    • Edmond J. A., Kong H. S., and Carter Jr. C. H. "Blue LEDs, UV photodiodes and high-temperature rectifiers in 6 H-SiC" Physica B 185, 453 (1993)
    • (1993) Physica B , vol.185 , pp. 453
    • Edmond, J.A.1    Kong, H.S.2    Carter, C.H.3
  • 12
    • 0025444968 scopus 로고
    • Silica to silicon: Key carbothermic reactions and kinetics
    • Filsinger D. H. and Bourrie D. B. "Silica to silicon: Key carbothermic reactions and kinetics" J. Amer. Ceram. Soc. 73, 1726 (1990)
    • (1990) J. Amer. Ceram. Soc , vol.73 , pp. 1726
    • Filsinger, D.H.1    Bourrie, D.B.2
  • 14
    • 36849140883 scopus 로고
    • Electroluminescence near bandgap in GaP containing shallow donor and acceptor levels
    • Foster L. M. and Pilkuhn M. "Electroluminescence near bandgap in GaP containing shallow donor and acceptor levels" Appl. Phys. Lett. 7, 65 (1965)
    • (1965) Appl. Phys. Lett , vol.7 , pp. 65
    • Foster, L.M.1    Pilkuhn, M.2
  • 15
    • 33744531116 scopus 로고
    • Efficiency of recombination radiation in GaP
    • Grimmeiss H. G. and Scholz H. J. "Efficiency of recombination radiation in GaP" Phys. Lett. 8, 233 (1964)
    • (1964) Phys. Lett , vol.8 , pp. 233
    • Grimmeiss, H.G.1    Scholz, H.J.2
  • 20
    • 0033347306 scopus 로고    scopus 로고
    • Photon recycling semiconductor light-emitting diode
    • IEDM-99, (Dec)
    • Guo X., Graff J. W., and Schubert E. F. "Photon recycling semiconductor light-emitting diode" IEDM Technical Digest, IEDM-99, 600 (Dec. 1999)
    • (1999) IEDM Technical Digest , pp. 600
    • Guo, X.1    Graff, J.W.2    Schubert, E.F.3
  • 23
    • 84923617825 scopus 로고
    • Active region in visible-light diode laser
    • Holonyak Jr. N. "Active region in visible-light diode laser" Electronics 36, 35 (1963)
    • (1963) Electronics , vol.36 , pp. 35
    • Holonyak, N.1
  • 24
    • 46749104301 scopus 로고
    • Laser action in Ga(AsP) and GaAs
    • Holonyak Jr. N. "Laser action in Ga(AsP) and GaAs" Proc. IEEE 52, 104 (1964)
    • (1964) Proc. IEEE , vol.52 , pp. 104
    • Holonyak, N.1
  • 29
    • 36048940395 scopus 로고
    • Effect of donor impurities on the direct-indirect transition in Ga(AsP)
    • Holonyak Jr. N., Nuese C. J., Sirkis M. D., and Stillman G. E. "Effect of donor impurities on the direct-indirect transition in Ga(AsP)" Appl. Phys. Lett. 8, 83 (1966)
    • (1966) Appl. Phys. Lett , vol.8 , pp. 83
    • Holonyak, N.1    Nuese, C.J.2    Sirkis, M.D.3    Stillman, G.E.4
  • 31
    • 0039627656 scopus 로고
    • MOCVD growth of AlGaInP at atmospheric pressure using triethylmetals and phosphine
    • Ikeda M., Nakano K., Mori Y., Kaneko K. and Watanabe N. "MOCVD growth of AlGaInP at atmospheric pressure using triethylmetals and phosphine" J. Cryst. Growth 77, 380 (1986)
    • (1986) J. Cryst. Growth , vol.77 , pp. 380
    • Ikeda, M.1    Nakano, K.2    Mori, Y.3    Kaneko, K.4    Watanabe, N.5
  • 33
    • 0025444742 scopus 로고
    • 636 nm room temperature cw operation by heterobarrier blocking structure InGaAlP laser diodes
    • Itaya K., Ishikawa M., and Uematsu Y. "636 nm room temperature cw operation by heterobarrier blocking structure InGaAlP laser diodes" Electronics Lett. 26, 839 (1990)
    • (1990) Electronics Lett , vol.26 , pp. 839
    • Itaya, K.1    Ishikawa, M.2    Uematsu, Y.3
  • 36
  • 37
    • 0022130657 scopus 로고
    • Room-temperature cw operation of AlGaInP double-heterostructure visible lasers
    • Kobayashi K., Kawata S., Gomyo A., Hino I. and Suzuki T. "Room-temperature cw operation of AlGaInP double-heterostructure visible lasers" Electron. Lett. 21, 931 (1985)
    • (1985) Electron. Lett , vol.21 , pp. 931
    • Kobayashi, K.1    Kawata, S.2    Gomyo, A.3    Hino, I.4    Suzuki, T.5
  • 41
    • 0005984332 scopus 로고
    • Subhistories of the light-emitting diode
    • ED-23
    • Loebner E. E. "Subhistories of the light-emitting diode" IEEE Trans. Electron Devices ED-23, 675 (1976)
    • (1976) IEEE Trans. Electron Devices , pp. 675
    • Loebner, E.E.1
  • 43
    • 36849102651 scopus 로고
    • P-n junctions in compensated solution grown GaP
    • Logan R. A., White H. G., and Trumbore F. A. "P-n junctions in compensated solution grown GaP" J. Appl. Phys. 38, 2500 (1967a)
    • (1967) J. Appl. Phys , vol.38 , pp. 2500
    • Logan, R.A.1    White, H.G.2    Trumbore, F.A.3
  • 44
    • 36849098578 scopus 로고
    • P-n junctions in GaP with external electroluminescence efficiencies ~ 2% at 25 °C
    • Logan R. A., White H. G., and Trumbore F. A. "P-n junctions in GaP with external electroluminescence efficiencies ~ 2% at 25 °C" Appl. Phys. Lett. 10, 206 (1967b)
    • (1967) Appl. Phys. Lett , vol.10 , pp. 206
    • Logan, R.A.1    White, H.G.2    Trumbore, F.A.3
  • 45
    • 0000962728 scopus 로고
    • Efficient green electroluminescence in nitrogen-doped GaP pn junctions
    • Logan R. A., White H. G., Wiegmann W. "Efficient green electroluminescence in nitrogen-doped GaP pn junctions" Appl. Phys. Lett. 13, 139 (1968)
    • (1968) Appl. Phys. Lett , vol.13 , pp. 139
    • Logan, R.A.1    White, H.G.2    Wiegmann, W.3
  • 47
    • 0002223599 scopus 로고
    • Preparation, stability, and luminescnce of gallium nitride
    • Lorenz M. R. and Binkowski B. B. "Preparation, stability, and luminescnce of gallium nitride" J. Electrochem. Soc. 109, 24 (1962)
    • (1962) J. Electrochem. Soc , vol.109 , pp. 24
    • Lorenz, M.R.1    Binkowski, B.B.2
  • 48
    • 0010443688 scopus 로고
    • Luminous carborundum detector and detection effect and oscillations with crystals
    • Lossev O. V. "Luminous carborundum detector and detection effect and oscillations with crystals" Philosophical Magazine 6, 1024 (1928)
    • (1928) Philosophical Magazine , vol.6 , pp. 1024
    • Lossev, O.V.1
  • 49
    • 84923624452 scopus 로고    scopus 로고
    • The photograph of a GaN MIS LED is gratefully acknowledged
    • Maruska H. P., personal communication. The photograph of a GaN MIS LED is gratefully acknowledged (2000)
    • (2000) Personal communication
    • Maruska, H.P.1
  • 51
    • 0014595810 scopus 로고
    • The preparation and properties of vapour-deposited single-crystalline GaN
    • Maruska H. P. and Tietjen J. J. "The preparation and properties of vapour-deposited single-crystalline GaN" Appl. Phys. Lett. 15, 327 (1969)
    • (1969) Appl. Phys. Lett , vol.15 , pp. 327
    • Maruska, H.P.1    Tietjen, J.J.2
  • 52
    • 0042003441 scopus 로고
    • Preparation of Mg-doped GaN diodes exhibiting violet electroluminescence
    • Maruska H. P., Rhines W. C., Stevenson D. A. "Preparation of Mg-doped GaN diodes exhibiting violet electroluminescence" Mat. Res. Bull. 7, 777 (1972)
    • (1972) Mat. Res. Bull , vol.7 , pp. 777
    • Maruska, H.P.1    Rhines, W.C.2    Stevenson, D.A.3
  • 53
    • 0347219348 scopus 로고
    • Violet luminescence of Mg-doped GaN (light-emitting diode properties)
    • Maruska H. P., Stevenson D. A., Pankove J. I. "Violet luminescence of Mg-doped GaN (light-emitting diode properties)" Appl. Phys. Lett. 22, 303 (1973)
    • (1973) Appl. Phys. Lett , vol.22 , pp. 303
    • Maruska, H.P.1    Stevenson, D.A.2    Pankove, J.I.3
  • 54
    • 0016101163 scopus 로고
    • Microstructural observations on gallium nitride lightemitting diodes
    • Maruska H. P., Anderson L. J., Stevenson D. A. "Microstructural observations on gallium nitride lightemitting diodes" J. Electrochem. Soc. 121, 1202 (1974a)
    • (1974) J. Electrochem. Soc , vol.121 , pp. 1202
    • Maruska, H.P.1    Anderson, L.J.2    Stevenson, D.A.3
  • 55
    • 0016125190 scopus 로고
    • Mechanism of light production in metal-insulator-semiconductor diodes; GaN:Mg violet light-emitting diodes
    • Maruska H. P. and Stevenson D. A. "Mechanism of light production in metal-insulator-semiconductor diodes; GaN:Mg violet light-emitting diodes" Solid State Electronics 17, 1171 (1974b)
    • (1974) Solid State Electronics , vol.17 , pp. 1171
    • Maruska, H.P.1    Stevenson, D.A.2
  • 56
    • 1242304600 scopus 로고    scopus 로고
    • Electroluminescence I
    • (Editor), (Academic Press, San Diego)
    • Mueller G. (Editor) Electroluminescence I Semiconductors and Semimetals 64 (Academic Press, San Diego, 2000)
    • (2000) Semiconductors and Semimetals , vol.64
    • Mueller, G.1
  • 58
    • 0026241977 scopus 로고
    • Highly p-type Mg doped GaN films grown with GaN buffer layers
    • Nakamura S., Senoh M., and Mukai T. "Highly p-type Mg doped GaN films grown with GaN buffer layers" Jpn. J. Appl. Phys. 30, L 1708 (1991)
    • (1991) Jpn. J. Appl. Phys , vol.30
    • Nakamura, S.1    Senoh, M.2    Mukai, T.3
  • 59
    • 0027187087 scopus 로고
    • P-GaN/n-InGaN/n-GaN double-heterostructure blue-lightemitting diodes
    • Nakamura S., Senoh M., and Mukai T. "P-GaN/n-InGaN/n-GaN double-heterostructure blue-lightemitting diodes" Jpn. J. Appl. Phys. 32, L8 (1993a)
    • (1993) Jpn. J. Appl. Phys , vol.32
    • Nakamura, S.1    Senoh, M.2    Mukai, T.3
  • 60
    • 21544458581 scopus 로고
    • High-power InGaN/GaN double-heterostructure violet lightemitting diodes
    • Nakamura S., Senoh M., and Mukai T. "High-power InGaN/GaN double-heterostructure violet lightemitting diodes" Appl. Phys. Lett. 62, 2390 (1993b)
    • (1993) Appl. Phys. Lett , vol.62 , pp. 2390
    • Nakamura, S.1    Senoh, M.2    Mukai, T.3
  • 62
    • 0028385147 scopus 로고
    • Candela-class high-brightness InGaN/AlGaN doubleheterostructure blue-light-emitting diodes
    • Nakamura S., Mukai T., and Senoh M. "Candela-class high-brightness InGaN/AlGaN doubleheterostructure blue-light-emitting diodes" Appl. Phys. Lett. 64, 1687 (1994b)
    • (1994) Appl. Phys. Lett , vol.64 , pp. 1687
    • Nakamura, S.1    Mukai, T.2    Senoh, M.3
  • 63
    • 0029346154 scopus 로고
    • High-brightness InGaN blue, green, and yellow lightemitting diodes with quantum well structures
    • Nakamura S., Senoh M., Iwasa N., Nagahama S. "High-brightness InGaN blue, green, and yellow lightemitting diodes with quantum well structures" Jpn. J. Appl. Phys. 34, L797 (1995)
    • (1995) Jpn. J. Appl. Phys , vol.34
    • Nakamura, S.1    Senoh, M.2    Iwasa, N.3    Nagahama, S.4
  • 67
    • 85032407559 scopus 로고    scopus 로고
    • 25 (Aug.), and 7, No. 9, 15 (Oct. 2001)
    • Nakamura S. Compound Semiconductors 7, No. 7, 25 (Aug. 2001) and 7, No. 9, 15 (Oct. 2001)
    • (2001) Compound Semiconductors , vol.7 , Issue.7
    • Nakamura, S.1
  • 69
    • 84923557433 scopus 로고    scopus 로고
    • edited by I. Matsushita and E. Shibata (Nichia Company, Tokushima, Japan)
    • Nichia Corporation Remarkable Technology edited by I. Matsushita and E. Shibata (Nichia Company, Tokushima, Japan, 2004)
    • (2004) Remarkable Technology
    • Nichia Corporation1
  • 72
    • 0000784328 scopus 로고
    • Growth of high-quality InGaAlP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductor lasers
    • Ohba Y., Ishikawa M., Sugawara H., Yamamoto T., and Nakanisi T. "Growth of high-quality InGaAlP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductor lasers" J. Cryst. Growth 77, 374 (1986)
    • (1986) J. Cryst. Growth , vol.77 , pp. 374
    • Ohba, Y.1    Ishikawa, M.2    Sugawara, H.3    Yamamoto, T.4    Nakanisi, T.5
  • 74
    • 46749137404 scopus 로고
    • A light source modulated at microwave frequencies
    • Pankove J. I. and Berkeyheiser J. E. "A light source modulated at microwave frequencies" Proc. IRE, 50, 1976 (1962)
    • (1962) Proc. IRE , vol.50 , pp. 1976
    • Pankove, J.I.1    Berkeyheiser, J.E.2
  • 81
    • 35949030122 scopus 로고
    • Model for electroluminescence in GaN
    • Pankove J. I. and Lampert M. A. "Model for electroluminescence in GaN" Phys. Rev. Lett. 33, 361 (1974)
    • (1974) Phys. Rev. Lett , vol.33 , pp. 361
    • Pankove, J.I.1    Lampert, M.A.2
  • 82
    • 84914678083 scopus 로고
    • M. George Craford
    • February issue
    • Perry T. S. "M. George Craford" IEEE Spectrum, February issue, p. 52 (1995)
    • (1995) IEEE Spectrum , pp. 52
    • Perry, T.S.1
  • 85
    • 2842602276 scopus 로고
    • Light-emitting diodes
    • edited by T. S. Moss, 4, edited by C. Hilsum
    • Pilkuhn M. H. "Light-emitting diodes" in Handbook of Semiconductors edited by T. S. Moss, 4, edited by C. Hilsum, p. 539 (1981)
    • (1981) Handbook of Semiconductors , pp. 539
    • Pilkuhn, M.H.1
  • 86
    • 84923559833 scopus 로고    scopus 로고
    • The photograph of GaP:Zn-O LED is gratefully acknowledged
    • Pilkuhn M. H., personal communication. The photograph of GaP:Zn-O LED is gratefully acknowledged (2000)
    • (2000) Personal communication
    • Pilkuhn, M.H.1
  • 89
    • 84927692161 scopus 로고    scopus 로고
    • LEDs cast Monsanto in unfamiliar role
    • Issue 944, March 10
    • Rostky G. "LEDs cast Monsanto in unfamiliar role" Electronic Engineering Times (EETimes) on the internet, http://eetimes.com/anniversary/designclassics/monsanto.html, Issue 944, March 10 (1997)
    • (1997) Electronic Engineering Times (EETimes) on the internet
    • Rostky, G.1
  • 90
    • 0000761113 scopus 로고
    • A note on carborundum
    • Round H. J. "A note on carborundum" Electrical World, 19, 309 (1907)
    • (1907) Electrical World , vol.19 , pp. 309
    • Round, H.J.1
  • 91
    • 84893970375 scopus 로고
    • Continuous stimulated emission from GaAs diodes at 77 K
    • (First report of 77 K cw laser)
    • Rupprecht H., Pilkuhn M., and Woodall J. M. "Continuous stimulated emission from GaAs diodes at 77 K" (First report of 77 K cw laser) Proc. IEEE 51, 1243 (1963)
    • (1963) Proc. IEEE , vol.51 , pp. 1243
    • Rupprecht, H.1    Pilkuhn, M.2    Woodall, J.M.3
  • 93
    • 0001846149 scopus 로고
    • Efficient visible electroluminescence at 300 K from AlGaAs pn junctions grown by liquid phase epitaxy
    • Rupprecht H., Woodall J. M., and Pettit G. D. "Efficient visible electroluminescence at 300 K from AlGaAs pn junctions grown by liquid phase epitaxy" Appl. Phys. Lett. 11, 81 (1967).
    • (1967) Appl. Phys. Lett , vol.11 , pp. 81
    • Rupprecht, H.1    Woodall, J.M.2    Pettit, G.D.3
  • 98
    • 0000043971 scopus 로고    scopus 로고
    • Enhancement of deep acceptor activation in semiconductors by superlattice doping
    • Schubert E. F., Grieshaber W., and Goepfert I. D. "Enhancement of deep acceptor activation in semiconductors by superlattice doping" Appl. Phys. Lett. 69, 3737 (1996)
    • (1996) Appl. Phys. Lett , vol.69 , pp. 3737
    • Schubert, E.F.1    Grieshaber, W.2    Goepfert, I.D.3
  • 102
    • 0001017603 scopus 로고    scopus 로고
    • High Brightness Light-Emitting Diodes
    • (Editors), (Academic Press, San Diego)
    • Stringfellow G. B. and Craford M. G. (Editors) High Brightness Light-Emitting Diodes Semiconductors and Semimetals 48 (Academic Press, San Diego, 1997)
    • (1997) Semiconductors and Semimetals , vol.48
    • Stringfellow, G.B.1    Craford, M.G.2
  • 104
    • 4243074884 scopus 로고
    • Isoelectronic traps due to nitrogen in gallium phosphide
    • Thomas D. G., Hopfield J. J., and Frosch C. J. "Isoelectronic traps due to nitrogen in gallium phosphide" Phys. Rev. Lett. 15, 857 (1965)
    • (1965) Phys. Rev. Lett , vol.15 , pp. 857
    • Thomas, D.G.1    Hopfield, J.J.2    Frosch, C.J.3
  • 106
    • 84939764203 scopus 로고
    • On new semiconducting compounds (translated from German)
    • Welker H. "On new semiconducting compounds (translated from German)" Zeitschrift für Naturforschung 7a, 744 (1952)
    • (1952) Zeitschrift für Naturforschung , vol.7 A , pp. 744
    • Welker, H.1
  • 107
    • 84941611672 scopus 로고
    • On new semiconducting compounds II (translated from German)
    • Welker H. "On new semiconducting compounds II (translated from German)" Zeitschrift für Naturforschung 8a, 248 (1953)
    • (1953) Zeitschrift für Naturforschung , vol.8 A , pp. 248
    • Welker, H.1
  • 108
    • 0000394996 scopus 로고
    • Growth and dislocation structure of single-crystal Ga(AsP)
    • Wolfe C. M., Nuese C. J., and Holonyak Jr. N. "Growth and dislocation structure of single-crystal Ga(AsP)" J. Appl. Phys. 36, 3790 (1965)
    • (1965) J. Appl. Phys , vol.36 , pp. 3790
    • Wolfe, C.M.1    Nuese, C.J.2    Holonyak, N.3
  • 113
    • 0041924961 scopus 로고    scopus 로고
    • Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers
    • Aleksiejunas R., Sudzius M., Malinauskas T., Vaitkus J., Jarasiunas K. and Sakai S. "Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers" Appl. Phys. Lett. 83, 1157 (2003)
    • (2003) Appl. Phys. Lett , vol.83 , pp. 1157
    • Aleksiejunas, R.1    Sudzius, M.2    Malinauskas, T.3    Vaitkus, J.4    Jarasiunas, K.5    Sakai, S.6
  • 114
    • 23544459548 scopus 로고
    • Electronic structure, total energies, and abundances of the elementary point defects in GaAs
    • Baraff G. A. and Schluter M. "Electronic structure, total energies, and abundances of the elementary point defects in GaAs" Phys. Rev. Lett. 55, 1327 (1985)
    • (1985) Phys. Rev. Lett , vol.55 , pp. 1327
    • Baraff, G.A.1    Schluter, M.2
  • 115
    • 0026204359 scopus 로고
    • Transient photoluminescence decay study of minority carrier lifetime in GaAs heteroface solar cell structures
    • Ehrhardt A., Wettling W., and Bett A. "Transient photoluminescence decay study of minority carrier lifetime in GaAs heteroface solar cell structures" Appl. Phys. A (Solids and Surfaces) A53, 123 (1991)
    • (1991) Appl. Phys. A (Solids and Surfaces) , vol.A53 , pp. 123
    • Ehrhardt, A.1    Wettling, W.2    Bett, A.3
  • 116
    • 0030264903 scopus 로고    scopus 로고
    • Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices
    • Grieshaber W., Schubert E. F., Goepfert I. D., Karlicek R. F. Jr., Schurman M. J. and Tran C. "Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices" J. Appl. Phys. 80, 4615 (1996)
    • (1996) J. Appl. Phys , vol.80 , pp. 4615
    • Grieshaber, W.1    Schubert, E.F.2    Goepfert, I.D.3    Karlicek, R.F.4    Schurman, M.J.5    Tran, C.6
  • 117
    • 36149004075 scopus 로고
    • Electron-hole recombination in germanium
    • Hall R. N. "Electron-hole recombination in germanium" Phys. Rev. 87, 387 (1952)
    • (1952) Phys. Rev , vol.87 , pp. 387
    • Hall, R.N.1
  • 118
    • 0015144993 scopus 로고
    • Doping dependence of hole lifetime in n-type GaAs
    • Hwang C. J. "Doping dependence of hole lifetime in n-type GaAs" J. Appl. Phys. 42, 4408 (1971)
    • (1971) J. Appl. Phys , vol.42 , pp. 4408
    • Hwang, C.J.1
  • 120
    • 0001395846 scopus 로고
    • Ionization interaction between impurities in semiconductors and insulators
    • Longini R. L. and Greene R. F. "Ionization interaction between impurities in semiconductors and insulators" Phys. Rev. 102, 992 (1956)
    • (1956) Phys. Rev , vol.102 , pp. 992
    • Longini, R.L.1    Greene, R.F.2
  • 121
    • 0344160494 scopus 로고
    • Interfacial recombination velocity in GaAlAs/GaAs heterostructures
    • Nelson R. J. and Sobers R. G. "Interfacial recombination velocity in GaAlAs/GaAs heterostructures" Appl. Phys. Lett. 32, 761 (1978a)
    • (1978) Appl. Phys. Lett , vol.32 , pp. 761
    • Nelson, R.J.1    Sobers, R.G.2
  • 122
    • 0018059542 scopus 로고
    • Minority-carrier lifetime and internal quantum efficiency of surface-free GaAs
    • Nelson R. J. and Sobers R. G. "Minority-carrier lifetime and internal quantum efficiency of surface-free GaAs" Appl. Phys. Lett. 49, 6103 (1978b)
    • (1978) Appl. Phys. Lett , vol.49 , pp. 6103
    • Nelson, R.J.1    Sobers, R.G.2
  • 123
    • 85010812746 scopus 로고    scopus 로고
    • Gallium vacancies and the yellow luminescence in GaN
    • Neugebauer J. and Van de Walle C. "Gallium vacancies and the yellow luminescence in GaN" Appl. Phys. Lett. 69, 503 (1996)
    • (1996) Appl. Phys. Lett , vol.69 , pp. 503
    • Neugebauer, J.1    Van de Walle, C.2
  • 124
    • 0021480052 scopus 로고
    • Measurement of radiative and non-radiative recombination rates in InGaAsP and AlGaAs light sources
    • QE-20
    • Olshansky R., Su C. B., Manning J., and Powazinik W. "Measurement of radiative and non-radiative recombination rates in InGaAsP and AlGaAs light sources" IEEE J. Quantum Electronics QE-20, 838 (1984)
    • (1984) IEEE J. Quantum Electronics , pp. 838
    • Olshansky, R.1    Su, C.B.2    Manning, J.3    Powazinik, W.4
  • 126
    • 2742612566 scopus 로고    scopus 로고
    • Stretched exponential relaxation in molecular and electronic glasses
    • Phillips J. C. "Stretched exponential relaxation in molecular and electronic glasses" Rep. Prog. Phys. 59, 1133 (1996)
    • (1996) Rep. Prog. Phys , vol.59 , pp. 1133
    • Phillips, J.C.1
  • 127
    • 0000098748 scopus 로고    scopus 로고
    • Observation of native Ga vacancies in GaN by positron annihilation
    • Saarinen K. et al. "Observation of native Ga vacancies in GaN by positron annihilation" Phys. Rev. Lett. 79, 3030 (1997)
    • (1997) Phys. Rev. Lett , vol.79 , pp. 3030
    • Saarinen, K.1
  • 128
    • 0004237593 scopus 로고
    • (Cambridge University Press, Cambridge UK, 1993) Schubert E. F., unpublished
    • Schubert E. F. Doping in III-V Semiconductors (Cambridge University Press, Cambridge UK, 1993) Schubert E. F., unpublished (1995)
    • (1995) Doping in III-V Semiconductors
    • Schubert, E.F.1
  • 129
    • 0344113441 scopus 로고    scopus 로고
    • Evidence of compensating centers as origin of yellow luminescence in GaN
    • Schubert E. F., Goepfert I., and Redwing J. M. "Evidence of compensating centers as origin of yellow luminescence in GaN" Appl. Phys. Lett. 71, 3224 (1997)
    • (1997) Appl. Phys. Lett , vol.71 , pp. 3224
    • Schubert, E.F.1    Goepfert, I.2    Redwing, J.M.3
  • 131
    • 33748621800 scopus 로고
    • Statistics of the recombinations of holes and electrons
    • Shockley W. and Read W. T. "Statistics of the recombinations of holes and electrons" Phys. Rev. 87, 835 (1952)
    • (1952) Phys. Rev , vol.87 , pp. 835
    • Shockley, W.1    Read, W.T.2
  • 135
  • 137
  • 138
    • 0004754793 scopus 로고
    • Recombination processes in semiconductors
    • Hall R. N. "Recombination processes in semiconductors" Proc. Inst. Electr. Eng. 106 B, Suppl. 17, 983 (1960)
    • (1960) Proc. Inst. Electr. Eng , vol.106 B , pp. 983
    • Hall, R.N.1
  • 139
    • 30244514592 scopus 로고
    • Band structure of indium antimonide
    • Kane E. O. "Band structure of indium antimonide" J. Phys. Chem. Solids 1, 249 (1957)
    • (1957) J. Phys. Chem. Solids , vol.1 , pp. 249
    • Kane, E.O.1
  • 140
    • 0021480052 scopus 로고
    • Measurement of radiative and non-radiative recombination rates in InGaAsP and AlGaAs light sources
    • Olshansky R., Su C. B., Manning J., and Powazinik W. "Measurement of radiative and non-radiative recombination rates in InGaAsP and AlGaAs light sources" IEEE J. Quantum Electron. QE-20, 838 (1984)
    • (1984) IEEE J. Quantum Electron , vol.QE-20 , pp. 838
    • Olshansky, R.1    Su, C.B.2    Manning, J.3    Powazinik, W.4
  • 142
    • 35148886794 scopus 로고
    • Photon-radiative recombination of electrons and holes in germanium
    • Van Roosbroeck W. and Shockley W. "Photon-radiative recombination of electrons and holes in germanium" Phys. Rev. 94, 1558 (1954)
    • (1954) Phys. Rev , vol.94 , pp. 1558
    • Van Roosbroeck, W.1    Shockley, W.2
  • 146
    • 0027112909 scopus 로고
    • Power and efficiency limits in single-mirror light-emitting diodes with enhanced intensity
    • Hunt N. E. J., Schubert E. F., Sivco D. L., Cho A. Y., and Zydzik G. J. "Power and efficiency limits in single-mirror light-emitting diodes with enhanced intensity" Electron. Lett. 28, 2169 (1992)
    • (1992) Electron. Lett , vol.28 , pp. 2169
    • Hunt, N.E.J.1    Schubert, E.F.2    Sivco, D.L.3    Cho, A.Y.4    Zydzik, G.J.5
  • 147
    • 0033738392 scopus 로고    scopus 로고
    • High-brightness AlGaInP light-emitting diodes
    • Krames M. R. et al. "High-brightness AlGaInP light-emitting diodes" Proceedings of SPIE 3938, 2 (2000)
    • (2000) Proceedings of SPIE , vol.3938 , pp. 2
    • Krames, M.R.1
  • 150
    • 0042924379 scopus 로고    scopus 로고
    • Experimental analysis and theoretical model for anomalously high ideality factors (n ≫ 2.0) in AlGaN/GaN p-n junction diodes
    • Shah J. M., Li Y.-L., Gessmann Th., and Schubert E. F. "Experimental analysis and theoretical model for anomalously high ideality factors (n ≫ 2.0) in AlGaN/GaN p-n junction diodes" J. Appl. Phys. 94, 2627 (2003)
    • (2003) J. Appl. Phys , vol.94 , pp. 2627
    • Shah, J.M.1    Li, Y.-L.2    Gessmann, T.3    Schubert, E.F.4
  • 154
    • 0000351227 scopus 로고
    • Temperature rise and thermal rise-time measurements of a semiconductor laser diode
    • Abdelkader H. I., Hausien H. H., and Martin J. D. "Temperature rise and thermal rise-time measurements of a semiconductor laser diode" Rev. Sci. Instrum. 63, 2004 (1992)
    • (1992) Rev. Sci. Instrum , vol.63 , pp. 2004
    • Abdelkader, H.I.1    Hausien, H.H.2    Martin, J.D.3
  • 155
    • 20444454215 scopus 로고    scopus 로고
    • Influence of junction temperature on chromaticity and color rendering properties of trichromatic white light sources based on light emitting diodes
    • Chhajed S., Xi Y., Li Y.-L., Gessmann Th., and Schubert E. F. "Influence of junction temperature on chromaticity and color rendering properties of trichromatic white light sources based on light emitting diodes" J. Appl. Phys. 97, 054506 (2005)
    • (2005) J. Appl. Phys , vol.97
    • Chhajed, S.1    Xi, Y.2    Li, Y.-L.3    Gessmann, T.4    Schubert, E.F.5
  • 157
    • 0042648451 scopus 로고
    • Influence of the vertical structure on the mirror facet temperatures of visible GaInP quantum well lasers
    • Epperlein P. W. and Bona G. L. "Influence of the vertical structure on the mirror facet temperatures of visible GaInP quantum well lasers" Appl. Phys. Lett. 62, 3074 (1993)
    • (1993) Appl. Phys. Lett , vol.62 , pp. 3074
    • Epperlein, P.W.1    Bona, G.L.2
  • 159
    • 84923579417 scopus 로고    scopus 로고
    • A non-contact method for determining junction temperature of phosphorconverted white LEDs
    • San Diego, Calif, (to be published)
    • Gu Y. and Narendran N. "A non-contact method for determining junction temperature of phosphorconverted white LEDs" Third International Conference on Solid State Lighting, Proceedings of SPIE, San Diego, Calif., 2003 (to be published)
    • (2003) Third International Conference on Solid State Lighting, Proceedings of SPIE
    • Gu, Y.1    Narendran, N.2
  • 160
    • 84923562468 scopus 로고    scopus 로고
    • Non-intrusive techniques help to predict the lifetime of LED lighting systems
    • October
    • J. Taylor "Non-intrusive techniques help to predict the lifetime of LED lighting systems" Compound Semiconductors October (2003)
    • (2003) Compound Semiconductors
    • Taylor, J.1
  • 162
    • 0001541144 scopus 로고
    • Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence microprobe
    • Hall D. C., Goldberg L., and Mehuys D. "Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence microprobe" Appl. Phys. Lett. 61, 384 (1992)
    • (1992) Appl. Phys. Lett , vol.61 , pp. 384
    • Hall, D.C.1    Goldberg, L.2    Mehuys, D.3
  • 164
    • 3643058083 scopus 로고
    • Adding a heat bypass improves the thermal characteristics of a 50 μm spaced 8-beam laser diode array
    • Murata S. and Nakada H. "Adding a heat bypass improves the thermal characteristics of a 50 μm spaced 8-beam laser diode array" J. Appl. Phys. 72, 2514 (1992)
    • (1992) J. Appl. Phys , vol.72 , pp. 2514
    • Murata, S.1    Nakada, H.2
  • 165
    • 0030422480 scopus 로고    scopus 로고
    • Photoluminescence measurement of the facet temperature of 1 W gain-guided AlGaAs/GaAs laser diodes
    • Rommel J. M., Gavrilovic P. and Dabkowski F. P. "Photoluminescence measurement of the facet temperature of 1 W gain-guided AlGaAs/GaAs laser diodes" J. Appl. Phys. 80, 6547 (1996)
    • (1996) J. Appl. Phys , vol.80 , pp. 6547
    • Rommel, J.M.1    Gavrilovic, P.2    Dabkowski, F.P.3
  • 167
    • 0005445463 scopus 로고
    • Temperature distribution along the striped active region in highpower GaAlAs visible lasers
    • Todoroki S., Sawai M., and Aiki K. "Temperature distribution along the striped active region in highpower GaAlAs visible lasers" J. Appl. Phys. 58, 1124 (1985)
    • (1985) J. Appl. Phys , vol.58 , pp. 1124
    • Todoroki, S.1    Sawai, M.2    Aiki, K.3
  • 168
    • 49949133713 scopus 로고
    • Temperature dependence of the energy gap in semiconductors
    • Varshni Y. P. "Temperature dependence of the energy gap in semiconductors" Physica 34, 149 (1967)
    • (1967) Physica , vol.34 , pp. 149
    • Varshni, Y.P.1
  • 169
    • 7044233214 scopus 로고    scopus 로고
    • Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward-voltage method
    • Xi Y. and Schubert E. F. "Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward-voltage method" Appl. Phys. Lett. 85, 2163 (2004)
    • (2004) Appl. Phys. Lett , vol.85 , pp. 2163
    • Xi, Y.1    Schubert, E.F.2
  • 171
    • 23544459548 scopus 로고
    • Electronic structure, total energies, and abundances of the elementary point defects in GaAs
    • Baraff G. A. and Schluter M. "Electronic structure, total energies, and abundances of the elementary point defects in GaAs" Phys. Rev. Lett. 55, 1327 (1985)
    • (1985) Phys. Rev. Lett , vol.55 , pp. 1327
    • Baraff, G.A.1    Schluter, M.2
  • 172
    • 21544434863 scopus 로고
    • Nucleation mechanism and the elimination of misfit dislocations at mismatched interfaces by reduction of growth area
    • Fitzgerald E. A., Watson G. P., Proano R. E., Ast D. G., Kirchner P. D., Pettit G. D., and Woodall J. M. "Nucleation mechanism and the elimination of misfit dislocations at mismatched interfaces by reduction of growth area" J. Appl. Phys. 65, 2220 (1989)
    • (1989) J. Appl. Phys , vol.65 , pp. 2220
    • Fitzgerald, E.A.1    Watson, G.P.2    Proano, R.E.3    Ast, D.G.4    Kirchner, P.D.5    Pettit, G.D.6    Woodall, J.M.7
  • 174
    • 0001395846 scopus 로고
    • Ionization interaction between impurities in semiconductors and insulators
    • Longini R. L. and Greene R. F. "Ionization interaction between impurities in semiconductors and insulators" Phys. Rev. 102, 992 (1956)
    • (1956) Phys. Rev , vol.102 , pp. 992
    • Longini, R.L.1    Greene, R.F.2
  • 175
    • 4143078533 scopus 로고
    • Defects in epitaxial multilayers. III. Preparation of almost perfect multilayers
    • Matthews J. W. and Blakeslee A. E. "Defects in epitaxial multilayers. III. Preparation of almost perfect multilayers" J. Cryst. Growth 32, 265 (1976)
    • (1976) J. Cryst. Growth , vol.32 , pp. 265
    • Matthews, J.W.1    Blakeslee, A.E.2
  • 178
    • 0043151060 scopus 로고    scopus 로고
    • Chemical trends for acceptor impurities in GaN
    • Neugebauer J. and Van de Walle C. G. "Chemical trends for acceptor impurities in GaN" J. Appl. Phys. 85, 3003 (1999)
    • (1999) J. Appl. Phys , vol.85 , pp. 3003
    • Neugebauer, J.1    Van de Walle, C.G.2
  • 179
    • 0029325439 scopus 로고
    • Evidence of very strong inter-epitaxiallayer diffusion in Zn doped GaInPAs/InP structures
    • Schubert E. F., Downey S. W., Pinzone C., and Emerson A. B. "Evidence of very strong inter-epitaxiallayer diffusion in Zn doped GaInPAs/InP structures" Appl. Phys. A 60, 525 (1995)
    • (1995) Appl. Phys. A , vol.60 , pp. 525
    • Schubert, E.F.1    Downey, S.W.2    Pinzone, C.3    Emerson, A.B.4
  • 180
    • 0032011040 scopus 로고    scopus 로고
    • 15,000 hours stable operation of resonant-cavity light-emitting diodes
    • Schubert E. F. and Hunt N. E. J. "15,000 hours stable operation of resonant-cavity light-emitting diodes" Appl. Phys. A 66, 319 (1998)
    • (1998) Appl. Phys. A , vol.66 , pp. 319
    • Schubert, E.F.1    Hunt, N.E.J.2
  • 182
    • 0000913014 scopus 로고
    • Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces
    • Walukiewicz W. "Fermi level dependent native defect formation: consequences for metal-semiconductor and semiconductor-semiconductor interfaces" J. Vac. Sci. Technol. B, 6, 1257 (1988)
    • (1988) J. Vac. Sci. Technol. B , vol.6 , pp. 1257
    • Walukiewicz, W.1
  • 183
    • 36549104644 scopus 로고
    • Amphoteric native defects in semiconductors
    • Walukiewicz W. "Amphoteric native defects in semiconductors" Appl. Phys. Lett. 54, 2094 (1989)
    • (1989) Appl. Phys. Lett , vol.54 , pp. 2094
    • Walukiewicz, W.1
  • 184
    • 0000804755 scopus 로고
    • Defect formation and diffusion in heavily doped semiconductors
    • Walukiewicz W. "Defect formation and diffusion in heavily doped semiconductors" Phys. Rev. B 50, 5221 (1994)
    • (1994) Phys. Rev. B , vol.50 , pp. 5221
    • Walukiewicz, W.1
  • 186
    • 0020909661 scopus 로고
    • Chemical etching characteristics of (001) GaAs
    • Adachi S. and Oe K. "Chemical etching characteristics of (001) GaAs" J. Electrochem. Soc. 130, 2427 (1983)
    • (1983) J. Electrochem. Soc , vol.130 , pp. 2427
    • Adachi, S.1    Oe, K.2
  • 188
    • 0026372757 scopus 로고
    • The growth and properties of high performance AlInGaP emitters using lattice mismatched GaP window layers
    • Fletcher R. M., Kuo C. P., Osentowski T. D., Huang K. H., and Craford M. G. "The growth and properties of high performance AlInGaP emitters using lattice mismatched GaP window layers" J. Electron. Mater. 20, 1125 (1991a)
    • (1991) J. Electron. Mater , vol.20 , pp. 1125
    • Fletcher, R.M.1    Kuo, C.P.2    Osentowski, T.D.3    Huang, K.H.4    Craford, M.G.5
  • 193
    • 0035927104 scopus 로고    scopus 로고
    • Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates
    • Guo X. and Schubert E. F. "Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates" Appl. Phys. Lett. 78, 3337 (2001)
    • (2001) Appl. Phys. Lett , vol.78 , pp. 3337
    • Guo, X.1    Schubert, E.F.2
  • 194
    • 0035943833 scopus 로고    scopus 로고
    • Efficiency of GaN/GaInN light-emitting diodes with interdigitated mesa geometry
    • Guo X., Li Y.-L., and Schubert E. F. "Efficiency of GaN/GaInN light-emitting diodes with interdigitated mesa geometry" Appl. Phys. Lett. 79, 1936 (2001)
    • (2001) Appl. Phys. Lett , vol.79 , pp. 1936
    • Guo, X.1    Li, Y.-L.2    Schubert, E.F.3
  • 195
    • 0035927047 scopus 로고    scopus 로고
    • Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions
    • Jeon S.-R., Song Y.-H., Jang H.-J., Yang G. M., Hwang S. W., and Son S. J. "Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions" Appl. Phys. Lett. 78, 3265 (2001)
    • (2001) Appl. Phys. Lett , vol.78 , pp. 3265
    • Jeon, S.-R.1    Song, Y.-H.2    Jang, H.-J.3    Yang, G.M.4    Hwang, S.W.5    Son, S.J.6
  • 198
    • 85032414309 scopus 로고    scopus 로고
    • LED Museum, www.ledmuseum.org (2004)
    • (2004)
  • 200
    • 0020752325 scopus 로고
    • Efficiency of GaAlAs heterostructure red light-emitting diodes
    • Nishizawa J., Koike M., and Jin C. C. "Efficiency of GaAlAs heterostructure red light-emitting diodes" J. Appl. Phys. 54, 2807 (1983)
    • (1983) J. Appl. Phys , vol.54 , pp. 2807
    • Nishizawa, J.1    Koike, M.2    Jin, C.C.3
  • 204
    • 36449009381 scopus 로고
    • High-efficiency InGaAlP/GaAs visible light-emitting diodes
    • Sugawara H., Ishakawa M., and Hatakoshi G. "High-efficiency InGaAlP/GaAs visible light-emitting diodes" Appl. Phys. Lett. 58, 1010 (1991)
    • (1991) Appl. Phys. Lett , vol.58 , pp. 1010
    • Sugawara, H.1    Ishakawa, M.2    Hatakoshi, G.3
  • 209
    • 0020909661 scopus 로고
    • Chemical etching characteristics of (001) GaAs
    • Adachi S. and Oe K. "Chemical etching characteristics of (001) GaAs" J. Electrochem. Soc. 130, 2427 (1983)
    • (1983) J. Electrochem. Soc , vol.130 , pp. 2427
    • Adachi, S.1    Oe, K.2
  • 211
    • 0038593209 scopus 로고
    • One-Watt GaAs p-n junction infrared source
    • Carr W. N. and Pittman G. E. "One-Watt GaAs p-n junction infrared source" Appl. Phys. Lett. 3, 173 (1963)
    • (1963) Appl. Phys. Lett , vol.3 , pp. 173
    • Carr, W.N.1    Pittman, G.E.2
  • 213
    • 0043155973 scopus 로고
    • Shaped electroluminescent GaAs diodes
    • Franklin A. R. and Newman R. "Shaped electroluminescent GaAs diodes" J. Appl. Phys. 35, 1153 (1964)
    • (1964) J. Appl. Phys , vol.35 , pp. 1153
    • Franklin, A.R.1    Newman, R.2
  • 214
    • 1542315187 scopus 로고    scopus 로고
    • Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
    • Fujii T., Gao Y., Sharma R., Hu E. L., DenBaars S. P., and Nakamura S. "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening" Appl. Phys. Lett. 84, 855 (2004)
    • (2004) Appl. Phys. Lett , vol.84 , pp. 855
    • Fujii, T.1    Gao, Y.2    Sharma, R.3    Hu, E.L.4    DenBaars, S.P.5    Nakamura, S.6
  • 215
    • 3142637226 scopus 로고    scopus 로고
    • Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching
    • Gao Y., Fujii T., Sharma R., Fujito K., DenBaars S. P., Nakamura S., and Hu E. L. "Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching" Jpn. J. Appl. Phys. 43, L 637 (2004)
    • (2004) Jpn. J. Appl. Phys , vol.43
    • Gao, Y.1    Fujii, T.2    Sharma, R.3    Fujito, K.4    DenBaars, S.P.5    Nakamura, S.6    Hu, E.L.7
  • 216
    • 85032411167 scopus 로고    scopus 로고
    • Naturally textured GaN surface
    • (CHTF) Shenzhen, China, October 12-17
    • Haerle V. "Naturally textured GaN surface" China Hi-Tech Fair (CHTF) Shenzhen, China, October 12-17 (2004)
    • (2004) China Hi-Tech Fair
    • Haerle, V.1
  • 220
    • 0020826482 scopus 로고
    • Infrared reflectance and absorption of n-type InP
    • Kim O. K. and Bonner W. A. "Infrared reflectance and absorption of n-type InP" J. Electron. Mater. 12, 827 (1983)
    • (1983) J. Electron. Mater , vol.12 , pp. 827
    • Kim, O.K.1    Bonner, W.A.2
  • 226
    • 0015648469 scopus 로고
    • The future of electroluminescent solids in display applications
    • Loebner E. E. "The future of electroluminescent solids in display applications" Proc. IEEE 61, 837 (1973)
    • (1973) Proc. IEEE , vol.61 , pp. 837
    • Loebner, E.E.1
  • 228
    • 0035503645 scopus 로고    scopus 로고
    • Evidence for voltage drops at misaligned wafer-bonded interfaces of AlGaInP light-emitting diodes by electrostatic force microscopy
    • O'Shea J. J., Camras M. D., Wynne D., and Hoefler G. E. "Evidence for voltage drops at misaligned wafer-bonded interfaces of AlGaInP light-emitting diodes by electrostatic force microscopy" J. Appl. Phys. 90, 4791 (2001)
    • (2001) J. Appl. Phys , vol.90 , pp. 4791
    • O'Shea, J.J.1    Camras, M.D.2    Wynne, D.3    Hoefler, G.E.4
  • 232
    • 0033737819 scopus 로고    scopus 로고
    • 45% quantum-efficiency lightemitting diodes with radial outcoupling taper
    • Schmid W., Eberhard F., Jager R., King R., Joos J., and Ebeling K. "45% quantum-efficiency lightemitting diodes with radial outcoupling taper" Proc. SPIE 3938, 90 (2000)
    • (2000) Proc. SPIE , vol.3938 , pp. 90
    • Schmid, W.1    Eberhard, F.2    Jager, R.3    King, R.4    Joos, J.5    Ebeling, K.6
  • 233
    • 0034931729 scopus 로고    scopus 로고
    • Efficient light-emitting diodes with radial outcoupling taper at 980 and 630 nm emission wavelength
    • Schmid W., Scherer M., Jager R., Strauss P., Streubel K., and Ebeling K. "Efficient light-emitting diodes with radial outcoupling taper at 980 and 630 nm emission wavelength" Proc. SPIE 4278, 109 (2001)
    • (2001) Proc. SPIE , vol.4278 , pp. 109
    • Schmid, W.1    Scherer, M.2    Jager, R.3    Strauss, P.4    Streubel, K.5    Ebeling, K.6
  • 235
    • 51149220122 scopus 로고
    • 30% external quantum efficiency from surface-textured, thin-film light-emitting diodes
    • Schnitzer I., Yablonovitch E., Caneau C., Gmitter T. J., and Scherer A. "30% external quantum efficiency from surface-textured, thin-film light-emitting diodes" Appl. Phys. Lett. 63, 2174 (1993)
    • (1993) Appl. Phys. Lett , vol.63 , pp. 2174
    • Schnitzer, I.1    Yablonovitch, E.2    Caneau, C.3    Gmitter, T.J.4    Scherer, A.5
  • 241
    • 0011959568 scopus 로고    scopus 로고
    • Optically pumped InGaN/GaN lasers with wet-etched facets
    • Stocker D. A., Schubert E. F., and Redwing J. M. "Optically pumped InGaN/GaN lasers with wet-etched facets" Appl. Phys. Lett. 77, 4253 (2000)
    • (2000) Appl. Phys. Lett , vol.77 , pp. 4253
    • Stocker, D.A.1    Schubert, E.F.2    Redwing, J.M.3
  • 243
    • 26344442097 scopus 로고
    • The long-wavelength edge of photographic sensitivity of the electronic absorption of solids
    • Urbach F. "The long-wavelength edge of photographic sensitivity of the electronic absorption of solids" Phys. Rev. 92, 1324 (1953)
    • (1953) Phys. Rev , vol.92 , pp. 1324
    • Urbach, F.1
  • 245
    • 35949039149 scopus 로고
    • Free-carrier absorption in n-type GaP
    • Wiley J. D. and DiDomenico Jr. M. "Free-carrier absorption in n-type GaP" Phys. Rev. B 1, 1655 (1970)
    • (1970) Phys. Rev. B , vol.1 , pp. 1655
    • Wiley, J.D.1    DiDomenico, M.2
  • 248
    • 0035828580 scopus 로고    scopus 로고
    • Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes
    • Windisch R., Rooman C., Kuijk M., Borghs G., and Heremans P. "Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes" Appl. Phys. Lett. 79, 2315 (2001)
    • (2001) Appl. Phys. Lett , vol.79 , pp. 2315
    • Windisch, R.1    Rooman, C.2    Kuijk, M.3    Borghs, G.4    Heremans, P.5
  • 250
    • 0004242004 scopus 로고
    • EMIS Datareview Ser. 2, 513 INSPEC (IEE, New York)
    • Adachi S. in Properties of Gallium Arsenide EMIS Datareview Ser. 2, 513 INSPEC (IEE, New York, 1990)
    • (1990) Properties of Gallium Arsenide
    • Adachi, S.1
  • 252
    • 0004021717 scopus 로고    scopus 로고
    • edited by C. W. Wilmsen, H. Temkin, and L. A. Coldren (Cambridge University Press, Cambridge)
    • Babic D. I., Piprek L., and Bowers J. E. in Vertical-Cavity Surface-Emitting Lasers edited by C. W. Wilmsen, H. Temkin, and L. A. Coldren (Cambridge University Press, Cambridge, 1999)
    • (1999) Vertical-Cavity Surface-Emitting Lasers
    • Babic, D.I.1    Piprek, L.2    Bowers, J.E.3
  • 253
    • 0010707539 scopus 로고
    • this book discusses metal reflectors in a historical context, (McGraw Hill, New York)
    • Bell L. The Telescope this book discusses metal reflectors in a historical context; pp. 220-227 (McGraw Hill, New York, 1922)
    • (1922) The Telescope , pp. 220-227
    • Bell, L.1
  • 254
    • 0009363231 scopus 로고
    • Spontaneous emission control in semiconductor microcavities
    • edited by E. Burstein and C. Weisbuch (Plenum Press, New York)
    • Björk G., Yamamoto Y., and Heitmann H. "Spontaneous emission control in semiconductor microcavities" in Confined Electrons and Photons edited by E. Burstein and C. Weisbuch (Plenum Press, New York, 1995)
    • (1995) Confined Electrons and Photons
    • Björk, G.1    Yamamoto, Y.2    Heitmann, H.3
  • 255
  • 256
    • 0037981312 scopus 로고    scopus 로고
    • All-silicon omnidirectional mirrors based on onedimensional photonic crystals
    • Bruyant A., Lérondel G., Reece P. J., and Gal M. "All-silicon omnidirectional mirrors based on onedimensional photonic crystals" Appl. Phys. Lett. 82, 3227 (2003)
    • (2003) Appl. Phys. Lett , vol.82 , pp. 3227
    • Bruyant, A.1    Lérondel, G.2    Reece, P.J.3    Gal, M.4
  • 258
    • 0004623209 scopus 로고    scopus 로고
    • Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes
    • Chiou S.-W., Lee C. P., Huang C. K., and Chen C. W. "Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes" J. Appl. Phys. 87, 2052 (2000)
    • (2000) J. Appl. Phys , vol.87 , pp. 2052
    • Chiou, S.-W.1    Lee, C.P.2    Huang, C.K.3    Chen, C.W.4
  • 261
    • 33749649073 scopus 로고
    • Optische Eigenschaften und Elektronen Theorie I
    • Drude P. "Optische Eigenschaften und Elektronen Theorie I" ("Optical properties and electron theory I") Annalen der Physik 14, 677 (1904)
    • (1904) Annalen der Physik , vol.14 , pp. 677
    • Drude, P.1
  • 262
    • 84968101453 scopus 로고
    • Optische Eigenschaften und Elektronen Theorie II
    • Drude P. "Optische Eigenschaften und Elektronen Theorie II" ("Optical properties and electron theory II") Annalen der Physik 14, 936 (1904)
    • (1904) Annalen der Physik , vol.14 , pp. 936
    • Drude, P.1
  • 265
    • 0004127788 scopus 로고    scopus 로고
    • (Pearson Education, Upper Saddle River NJ)
    • Hecht J. Understanding Fiber Optics (Pearson Education, Upper Saddle River NJ, 2001)
    • (2001) Understanding Fiber Optics
    • Hecht, J.1
  • 275
    • 0001339649 scopus 로고
    • Room temperature continuous wave lasing characteristics of a GaAs vertical-cavity surface-emitting laser
    • Koyama F., Kinoshita S., and Iga K. "Room temperature continuous wave lasing characteristics of a GaAs vertical-cavity surface-emitting laser" Appl. Phys. Lett. 55, 221 (1989)
    • (1989) Appl. Phys. Lett , vol.55 , pp. 221
    • Koyama, F.1    Kinoshita, S.2    Iga, K.3
  • 276
    • 0000439793 scopus 로고    scopus 로고
    • Disordered dielectric high reflectors with broadband from visible to infrared
    • Li H., Gu G., Chen H., and Zhu S. "Disordered dielectric high reflectors with broadband from visible to infrared" Appl. Phys. Lett. 74, 3260 (1999)
    • (1999) Appl. Phys. Lett , vol.74 , pp. 3260
    • Li, H.1    Gu, G.2    Chen, H.3    Zhu, S.4
  • 282
    • 0020766567 scopus 로고
    • Properties of tin doped indium oxide thin films prepared by magnetron sputtering
    • Ray S., Banerjee R., Basu N., Batabyal A. K., and Barua A. K. "Properties of tin doped indium oxide thin films prepared by magnetron sputtering" J. Appl. Phys. 54, 3497 (1983)
    • (1983) J. Appl. Phys , vol.54 , pp. 3497
    • Ray, S.1    Banerjee, R.2    Basu, N.3    Batabyal, A.K.4    Barua, A.K.5
  • 287
    • 0001349285 scopus 로고    scopus 로고
    • Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN
    • Sheu J. K., Su Y. K., Chi G. C., Jou M. J., and Chang C. M. " Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN" Appl. Phys. Lett. 72, 3317 (1998)
    • (1998) Appl. Phys. Lett , vol.72 , pp. 3317
    • Sheu, J.K.1    Su, Y.K.2    Chi, G.C.3    Jou, M.J.4    Chang, C.M.5
  • 288
    • 0035340773 scopus 로고    scopus 로고
    • Properties of dc magnetron sputtered indium tin oxide films on polymeric substrates at room temperature
    • Shin J. H., Shin S. H., Park J. I., and Kim H. H. "Properties of dc magnetron sputtered indium tin oxide films on polymeric substrates at room temperature" J. Appl. Phys. 89, 5199 (2001)
    • (2001) J. Appl. Phys , vol.89 , pp. 5199
    • Shin, J.H.1    Shin, S.H.2    Park, J.I.3    Kim, H.H.4
  • 289
    • 0027644347 scopus 로고
    • Optical properties of reactive ion etched corner reflector strained-layer InGaAs-GaAs-AlGaAs quantum-well lasers
    • Smith G. M., Forbes D. V., Coleman J. J., and Verdeyen J. T. "Optical properties of reactive ion etched corner reflector strained-layer InGaAs-GaAs-AlGaAs quantum-well lasers" IEEE Photonics Technol. Lett. 5, 873 (1993)
    • (1993) IEEE Photonics Technol. Lett , vol.5 , pp. 873
    • Smith, G.M.1    Forbes, D.V.2    Coleman, J.J.3    Verdeyen, J.T.4
  • 291
    • 0038651825 scopus 로고
    • Vertical cavity surface emitting lasers with semitransparent metallic mirrors and high quantum efficiencies
    • Tu L. W., Schubert E. F., Kopf R. F., Zydzik G. J., Hong M., Chu S. N. G., and Mannaerts J. P. "Vertical cavity surface emitting lasers with semitransparent metallic mirrors and high quantum efficiencies" Appl. Phys. Lett. 57, 2045 (1990)
    • (1990) Appl. Phys. Lett , vol.57 , pp. 2045
    • Tu, L.W.1    Schubert, E.F.2    Kopf, R.F.3    Zydzik, G.J.4    Hong, M.5    Chu, S.N.G.6    Mannaerts, J.P.7
  • 294
    • 0003391643 scopus 로고
    • 3rd edition (John Wiley and Sons, New York)
    • Yariv A. Quantum Electronics 3rd edition (John Wiley and Sons, New York, 1989)
    • (1989) Quantum Electronics
    • Yariv, A.1
  • 295
    • 0036457819 scopus 로고    scopus 로고
    • Thermal challenges in the future generation solid state lighting applications: Light emitting diodes
    • (Cat. No.02CH37258) May 30-June 1 2002, (IEEE, Piscataway NJ)
    • Arik M., Petroski J., and Weaver S. "Thermal challenges in the future generation solid state lighting applications: light emitting diodes" Eighth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.02CH37258) May 30-June 1 2002, p. 113 (IEEE, Piscataway NJ, 2002)
    • (2002) Eighth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems , pp. 113
    • Arik, M.1    Petroski, J.2    Weaver, S.3
  • 296
    • 0032225899 scopus 로고    scopus 로고
    • Life tests and failure mechanisms of GaN/AlGaN/InGaN light-emitting diodes
    • Barton D. L., Osinski M., Perlin P., Helms C. J., and Berg N. H. "Life tests and failure mechanisms of GaN/AlGaN/InGaN light-emitting diodes" Proc. SPIE 3279, 17 (1998)
    • (1998) Proc. SPIE , vol.3279 , pp. 17
    • Barton, D.L.1    Osinski, M.2    Perlin, P.3    Helms, C.J.4    Berg, N.H.5
  • 297
    • 84923558537 scopus 로고    scopus 로고
    • Samsung Advanced Institute of Technology, Suwon, Korea
    • Cho J., Samsung Advanced Institute of Technology, Suwon, Korea, personal communication (2005)
    • (2005) Personal communication
    • Cho, J.1
  • 304
    • 85032416196 scopus 로고    scopus 로고
    • LED Museum, http://ledmuseum.home.att.net/agilent.htm (2003)
    • (2003)
  • 312
    • 5444258137 scopus 로고    scopus 로고
    • Nitride-based LEDs with modulationdoped AlGaN-GaN superlattice structures
    • Wen T. C., Chang S. J., Lee C. T., Lai W. C., and Sheu J. K. "Nitride-based LEDs with modulationdoped AlGaN-GaN superlattice structures" IEEE Trans. Electron Dev. 51, 1743 (2004)
    • (2004) IEEE Trans. Electron Dev , vol.51 , pp. 1743
    • Wen, T.C.1    Chang, S.J.2    Lee, C.T.3    Lai, W.C.4    Sheu, J.K.5
  • 314
    • 0016118006 scopus 로고
    • Band structure enhancement and optimization of radiative recombination in GaAsP (and InGaP:N)
    • Campbell J. C., Holonyak Jr. N., Craford M. G., and Keune D. L. "Band structure enhancement and optimization of radiative recombination in GaAsP (and InGaP:N)" J. Appl. Phys. 45, 4543 (1974)
    • (1974) J. Appl. Phys , vol.45 , pp. 4543
    • Campbell, J.C.1    Holonyak, N.2    Craford, M.G.3    Keune, D.L.4
  • 315
  • 316
    • 0141817162 scopus 로고    scopus 로고
    • OMVPE growth of AlGaInP for highefficiency visible light-emitting diodes
    • edited by G. B. Stringfellow and M. G. Craford, (Academic Press, San Diego)
    • Chen C. H., Stockman S. A., Peanasky M. J., and Kuo C. P. "OMVPE growth of AlGaInP for highefficiency visible light-emitting diodes" in High Brightness Light Emitting Diodes edited by G. B. Stringfellow and M. G. Craford, Semiconductors and Semimetals 48, (Academic Press, San Diego, 1997)
    • (1997) High Brightness Light Emitting Diodes, Semiconductors and Semimetals , vol.48
    • Chen, C.H.1    Stockman, S.A.2    Peanasky, M.J.3    Kuo, C.P.4
  • 317
    • 0015416091 scopus 로고
    • Radiative recombination mechanisms in GaAsP diodes with and without nitrogen doping
    • Craford M. G., Shaw R. W., Herzog A. H., and Groves W. O. "Radiative recombination mechanisms in GaAsP diodes with and without nitrogen doping" J. Appl. Phys. 43, 4075 (1972)
    • (1972) J. Appl. Phys , vol.43 , pp. 4075
    • Craford, M.G.1    Shaw, R.W.2    Herzog, A.H.3    Groves, W.O.4
  • 318
    • 3142642936 scopus 로고    scopus 로고
    • Overview of device issues in high-brightness light-emitting diodes
    • edited by G. B. Stringfellow and M. G. Craford, (Academic Press, San Diego)
    • Craford M. G. "Overview of device issues in high-brightness light-emitting diodes" in High Brightness Light Emitting Diodes edited by G. B. Stringfellow and M. G. Craford, Semiconductors and Semimetals 48 (Academic Press, San Diego, 1997)
    • (1997) High Brightness Light Emitting Diodes, Semiconductors and Semimetals , vol.48
    • Craford, M.G.1
  • 321
    • 33744531116 scopus 로고
    • Efficiency of recombination radiation in GaP
    • Grimmeiss H. G. and Scholz H. "Efficiency of recombination radiation in GaP" Phys. Lett. 8, 233 (1964)
    • (1964) Phys. Lett , vol.8 , pp. 233
    • Grimmeiss, H.G.1    Scholz, H.2
  • 325
    • 36849140385 scopus 로고
    • Coherent (visible) light emission from Ga(AsP) junctions
    • Holonyak Jr. N. and Bevacqua S. F. "Coherent (visible) light emission from Ga(AsP) junctions" Appl. Phys. Lett. 1, 82 (1962)
    • (1962) Appl. Phys. Lett , vol.1 , pp. 82
    • Holonyak, N.1    Bevacqua, S.F.2
  • 327
    • 36048940395 scopus 로고
    • Effect of donor impurities on the direct-indirect transition in Ga(AsP)
    • Holonyak Jr. N., Nuese C. J., Sirkis M. D., and Stillman G. E., "Effect of donor impurities on the direct-indirect transition in Ga(AsP)" Appl. Phys. Lett. 8, 83 (1966)
    • (1966) Appl. Phys. Lett , vol.8 , pp. 83
    • Holonyak, N.1    Nuese, C.J.2    Sirkis, M.D.3    Stillman, G.E.4
  • 328
    • 0001170108 scopus 로고
    • High efficient GaAlAs light emitting diodes of 660 nm with double heterostructure on a GaAlAs substrate
    • Ishiguro H., Sawa K., Nagao S., Yamanaka H., and Koike S. "High efficient GaAlAs light emitting diodes of 660 nm with double heterostructure on a GaAlAs substrate" Appl. Phys. Lett. 43, 1034 (1983)
    • (1983) Appl. Phys. Lett , vol.43 , pp. 1034
    • Ishiguro, H.1    Sawa, K.2    Nagao, S.3    Yamanaka, H.4    Koike, S.5
  • 331
    • 0043080206 scopus 로고    scopus 로고
    • 0.5P/GaP light emitting diodes exhibiting > 50% external quantum efficiency
    • 0.5P/GaP light emitting diodes exhibiting > 50% external quantum efficiency" Appl. Phys. Lett. 75, 2365 (1999)
    • (1999) Appl. Phys. Lett , vol.75 , pp. 2365
    • Krames, M.R.1
  • 332
    • 0033738392 scopus 로고    scopus 로고
    • High-brightness AlGaInN light emitting diodes
    • Krames M. R. et al. "High-brightness AlGaInN light emitting diodes" Proc. SPIE 3938, 2 (2000)
    • (2000) Proc. SPIE , vol.3938 , pp. 2
    • Krames, M.R.1
  • 334
    • 36849102651 scopus 로고
    • P-n junctions in compensated solution grown GaP
    • Logan R. A., White H. G., and Trumbore F. A. "P-n junctions in compensated solution grown GaP" J. Appl. Phys. 38, 2500 (1967a)
    • (1967) J. Appl. Phys , vol.38 , pp. 2500
    • Logan, R.A.1    White, H.G.2    Trumbore, F.A.3
  • 335
    • 36849098578 scopus 로고
    • P-n junctions in GaP with external electrolumi-nescence efficiencies ~ 2% at 25 °C
    • Logan R. A., White H. G., and Trumbore F. A. "P-n junctions in GaP with external electrolumi-nescence efficiencies ~ 2% at 25 °C" Appl. Phys. Lett. 10, 206 (1967b)
    • (1967) Appl. Phys. Lett , vol.10 , pp. 206
    • Logan, R.A.1    White, H.G.2    Trumbore, F.A.3
  • 336
    • 0014970594 scopus 로고
    • Efficient green electroluminescent junctions in GaP
    • Logan R. A., White H. G., and Wiegmann W. "Efficient green electroluminescent junctions in GaP" Solid State Electron. 14, 55 (1971)
    • (1971) Solid State Electron , vol.14 , pp. 55
    • Logan, R.A.1    White, H.G.2    Wiegmann, W.3
  • 340
    • 0020752325 scopus 로고
    • Efficiency of GaAlAs heterostructure red light emitting diodes
    • Nishizawa J., Koike M., and Jin C. C. "Efficiency of GaAlAs heterostructure red light emitting diodes" J. Appl. Phys. 54, 2807 (1983)
    • (1983) J. Appl. Phys , vol.54 , pp. 2807
    • Nishizawa, J.1    Koike, M.2    Jin, C.C.3
  • 341
    • 0039852270 scopus 로고
    • Gallium arsenide-phosphide: Crystal, diffusion, and laser properties
    • Nuese C. J., Stillman G. E., Sirkis M. D., and Holonyak Jr. N., "Gallium arsenide-phosphide: crystal, diffusion, and laser properties" Solid State Electron. 9, 735 (1966)
    • (1966) Solid State Electron , vol.9 , pp. 735
    • Nuese, C.J.1    Stillman, G.E.2    Sirkis, M.D.3    Holonyak, N.4
  • 343
    • 0012452054 scopus 로고
    • Electroluminescence and lasing action in GaAsP
    • Pilkuhn M. and Rupprecht H. "Electroluminescence and lasing action in GaAsP" J. Appl. Phys. 36, 684 (1965)
    • (1965) J. Appl. Phys , vol.36 , pp. 684
    • Pilkuhn, M.1    Rupprecht, H.2
  • 346
    • 0003993150 scopus 로고    scopus 로고
    • AlGaAs red light-emitting diodes
    • edited by G. B. Stringfellow and M. G. Craford, (Academic Press, San Diego)
    • Steranka F. M. "AlGaAs red light-emitting diodes" in High Brightness Light Emitting Diodes edited by G. B. Stringfellow and M. G. Craford, Semiconductors and Semimetals 48 (Academic Press, San Diego, 1997)
    • (1997) High Brightness Light Emitting Diodes, Semiconductors and Semimetals , vol.48
    • Steranka, F.M.1
  • 348
  • 349
    • 84923548312 scopus 로고
    • Original version of the graph is courtesy of P. K. Tien of AT&T Bell Laboratories
    • Tien P. K. Original version of the graph is courtesy of P. K. Tien of AT&T Bell Laboratories (1988)
    • (1988)
    • Tien, P.K.1
  • 352
    • 0000394996 scopus 로고
    • Growth and dislocation structure of single-crystal Ga(AsP)
    • Wolfe C. M., Nuese C. J. and Holonyak Jr. N. "Growth and dislocation structure of single-crystal Ga(AsP)" J. Appl. Phys. 36, 3790 (1965)
    • (1965) J. Appl. Phys , vol.36 , pp. 3790
    • Wolfe, C.M.1    Nuese, C.J.2    Holonyak, N.3
  • 355
    • 0037103571 scopus 로고    scopus 로고
    • Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope
    • Albrecht M., Strunk H. P., Weyher J. L., Grzegory I., Porowski S., and Wosinski T. "Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope" J. Appl. Phys. 92, 2000 (2002)
    • (2002) J. Appl. Phys , vol.92 , pp. 2000
    • Albrecht, M.1    Strunk, H.P.2    Weyher, J.L.3    Grzegory, I.4    Porowski, S.5    Wosinski, T.6
  • 356
    • 84883188181 scopus 로고
    • P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)
    • Amano H., Kito M., Hiramatsu K., and Akasaki I. "P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)" Jpn. J. Appl. Phys. 28, L2112 (1989)
    • (1989) Jpn. J. Appl. Phys , vol.28
    • Amano, H.1    Kito, M.2    Hiramatsu, K.3    Akasaki, I.4
  • 360
    • 0642275027 scopus 로고    scopus 로고
    • Spontaneous polarization and piezoelectric constants of III-V nitrides
    • Bernardini F., Fiorentini V., and Vanderbilt D. "Spontaneous polarization and piezoelectric constants of III-V nitrides" Phys. Rev. B 56, R10 024 (1997)
    • (1997) Phys. Rev. B , vol.56
    • Bernardini, F.1    Fiorentini, V.2    Vanderbilt, D.3
  • 361
    • 0347382992 scopus 로고    scopus 로고
    • Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
    • Chichibu S., Azuhata T., Sota T., and Nakamura S. "Spontaneous emission of localized excitons in InGaN single and multiquantum well structures" Appl. Phys. Lett. 69, 4188 (1996)
    • (1996) Appl. Phys. Lett , vol.69 , pp. 4188
    • Chichibu, S.1    Azuhata, T.2    Sota, T.3    Nakamura, S.4
  • 364
    • 0032644247 scopus 로고    scopus 로고
    • Demonstration of efficient p-type doping in AlGaN/GaN superlattice structures
    • Goepfert I. D., Schubert E. F., Osinsky A., and Norris P. E. "Demonstration of efficient p-type doping in AlGaN/GaN superlattice structures" Electron. Lett. 35, 1109 (1999)
    • (1999) Electron. Lett , vol.35 , pp. 1109
    • Goepfert, I.D.1    Schubert, E.F.2    Osinsky, A.3    Norris, P.E.4
  • 366
    • 27144482123 scopus 로고    scopus 로고
    • Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency
    • Hangleiter A., Hitzel F., Netzel C., Fuhrmann D., Rossow U., Ade G., and Hinze P. "Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency" Phys. Rev. Lett. 95, 127402 (2005)
    • (2005) Phys. Rev. Lett , vol.95
    • Hangleiter, A.1    Hitzel, F.2    Netzel, C.3    Fuhrmann, D.4    Rossow, U.5    Ade, G.6    Hinze, P.7
  • 370
    • 0347371752 scopus 로고    scopus 로고
    • AlGaN and InAlGaN alloys-epitaxial growth, optical and electrical properties, and applications
    • Jiang H. X. and Lin J. Y. "AlGaN and InAlGaN alloys-epitaxial growth, optical and electrical properties, and applications" Opto-Electron. Rev. 10, 271 (2002)
    • (2002) Opto-Electron. Rev , vol.10 , pp. 271
    • Jiang, H.X.1    Lin, J.Y.2
  • 372
    • 15744392988 scopus 로고    scopus 로고
    • Deep-ultraviolet LEDs fabricated in AlInGaN using MEMOCVD
    • Khan M. A. "Deep-ultraviolet LEDs fabricated in AlInGaN using MEMOCVD" Proc. SPIE 5530, 224 (2004)
    • (2004) Proc. SPIE , vol.5530 , pp. 224
    • Khan, M.A.1
  • 373
    • 0043128525 scopus 로고    scopus 로고
    • III-nitride ultraviolet light-emitting diodes with delta doping
    • Kim K. H., Li J., Jin S. X., Lin J. Y., and Jiang H. X. "III-nitride ultraviolet light-emitting diodes with delta doping" Appl. Phys. Lett. 83, 566 (2003)
    • (2003) Appl. Phys. Lett , vol.83 , pp. 566
    • Kim, K.H.1    Li, J.2    Jin, S.X.3    Lin, J.Y.4    Jiang, H.X.5
  • 380
    • 0037815393 scopus 로고    scopus 로고
    • Low resistance non-alloy ohmic contact to p-type GaN using Mg-doped InGaN contact layer
    • Kumakura K., Makimoto T., and Kobayashi N. "Low resistance non-alloy ohmic contact to p-type GaN using Mg-doped InGaN contact layer" Phys. Stat. Sol. (a) 188, 363 (2001)
    • (2001) Phys. Stat. Sol. (a) , vol.188 , pp. 363
    • Kumakura, K.1    Makimoto, T.2    Kobayashi, N.3
  • 381
    • 0038686365 scopus 로고    scopus 로고
    • Ohmic contact to p-GaN using a strained InGaN contact layer and its thermal stability
    • Kumakura K., Makimoto T., and Kobayashi N. "Ohmic contact to p-GaN using a strained InGaN contact layer and its thermal stability" Jpn. J. Appl. Phys. 42, 2254 (2003)
    • (2003) Jpn. J. Appl. Phys , vol.42 , pp. 2254
    • Kumakura, K.1    Makimoto, T.2    Kobayashi, N.3
  • 382
    • 0029637531 scopus 로고
    • High dislocation densities in high efficiency GaN-based light-emitting diodes
    • Lester S. D., Ponce F. A., Craford M. G., and Steigerwald D. A. "High dislocation densities in high efficiency GaN-based light-emitting diodes" Appl. Phys. Lett. 66, 1249 (1995)
    • (1995) Appl. Phys. Lett , vol.66 , pp. 1249
    • Lester, S.D.1    Ponce, F.A.2    Craford, M.G.3    Steigerwald, D.A.4
  • 384
    • 4143078533 scopus 로고
    • Defects in epitaxial multilayers-III. Preparation of almost perfect multilayers
    • Matthews J. W. and Blakeslee A. E. "Defects in epitaxial multilayers-III. Preparation of almost perfect multilayers" J. Cryst. Growth 32, 265 (1976)
    • (1976) J. Cryst. Growth , vol.32 , pp. 265
    • Matthews, J.W.1    Blakeslee, A.E.2
  • 387
    • 0032090871 scopus 로고    scopus 로고
    • High-power UV GaInN/AlGaN double-heterostructure LEDs
    • Mukai T., Morita D., and Nakamura S. "High-power UV GaInN/AlGaN double-heterostructure LEDs" J. Cryst. Growth 189, 778 (1998)
    • (1998) J. Cryst. Growth , vol.189 , pp. 778
    • Mukai, T.1    Morita, D.2    Nakamura, S.3
  • 388
    • 0026241977 scopus 로고
    • Highly p-type Mg doped GaN films grown with GaN buffer layers
    • Nakamura S., Senoh M., and Mukai T. "Highly p-type Mg doped GaN films grown with GaN buffer layers" Jpn. J. Appl. Phys. 30, L1708 (1991)
    • (1991) Jpn. J. Appl. Phys , vol.30
    • Nakamura, S.1    Senoh, M.2    Mukai, T.3
  • 390
    • 0027187087 scopus 로고
    • P-GaN / N-InGaN / N-InGaN double heterostructure blue-lightemitting diodes
    • Nakamura S., Senoh M., and Mukai T. "P-GaN / N-InGaN / N-InGaN double heterostructure blue-lightemitting diodes" Jpn. J. Appl. Phys. 32, L8 (1993a)
    • (1993) Jpn. J. Appl. Phys , vol.32
    • Nakamura, S.1    Senoh, M.2    Mukai, T.3
  • 391
    • 21544458581 scopus 로고
    • High-power InGaN/GaN double-heterostructure violet light emitting diodes
    • Nakamura S., Senoh M., and Mukai T. "High-power InGaN/GaN double-heterostructure violet light emitting diodes" Appl. Phys. Lett. 62, 2390 (1993b)
    • (1993) Appl. Phys. Lett , vol.62 , pp. 2390
    • Nakamura, S.1    Senoh, M.2    Mukai, T.3
  • 392
    • 0000310243 scopus 로고
    • Growth of InGaN compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting diode
    • Nakamura S. "Growth of InGaN compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting diode" Microelectron. J. 25, 651 (1994)
    • (1994) Microelectron. J , vol.25 , pp. 651
    • Nakamura, S.1
  • 393
    • 0003453296 scopus 로고    scopus 로고
    • (Springer, Berlin), The authors discuss carrier localization effects on page 305 of the book. The authors discuss the initial stages of epitaxial growth on page 13 of the book
    • Nakamura S. and Fasol G. The Blue Laser Diode (Springer, Berlin, 1997). The authors discuss carrier localization effects on page 305 of the book. The authors discuss the initial stages of epitaxial growth on page 13 of the book.
    • (1997) The Blue Laser Diode
    • Nakamura, S.1    Fasol, G.2
  • 395
    • 0344975184 scopus 로고    scopus 로고
    • Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
    • Narukawa Y., Kawakami Y., Funato M., Fujita S., Fujita S., and Nakamura S. "Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm" Appl. Phys. Lett. 70, 981 (1997b)
    • (1997) Appl. Phys. Lett , vol.70 , pp. 981
    • Narukawa, Y.1    Kawakami, Y.2    Funato, M.3    Fujita, S.4    Fujita, S.5    Nakamura, S.6
  • 396
    • 1242329865 scopus 로고    scopus 로고
    • III-nitride blue and ultraviolet photonic crystal light emitting diodes
    • Oder T. N., Kim K. H., Lin J. Y., and Jiang H. X. "III-nitride blue and ultraviolet photonic crystal light emitting diodes" Appl. Phys. Lett. 84, 466 (2004)
    • (2004) Appl. Phys. Lett , vol.84 , pp. 466
    • Oder, T.N.1    Kim, K.H.2    Lin, J.Y.3    Jiang, H.X.4
  • 398
    • 0038269509 scopus 로고    scopus 로고
    • Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
    • Rosner S. J., Carr E. C., Ludowise M. J., Girolami G., and Erikson H. I. "Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition" Appl. Phys. Lett. 70, 420 (1997)
    • (1997) Appl. Phys. Lett , vol.70 , pp. 420
    • Rosner, S.J.1    Carr, E.C.2    Ludowise, M.J.3    Girolami, G.4    Erikson, H.I.5
  • 399
    • 0000043971 scopus 로고    scopus 로고
    • Enhancement of deep acceptor activation in semiconductors by superlattice doping
    • Schubert E. F., Grieshaber W., and Goepfert I. D. "Enhancement of deep acceptor activation in semiconductors by superlattice doping" Appl. Phys. Lett. 69, 3737 (1996)
    • (1996) Appl. Phys. Lett , vol.69 , pp. 3737
    • Schubert, E.F.1    Grieshaber, W.2    Goepfert, I.D.3
  • 400
    • 3242684501 scopus 로고    scopus 로고
    • Enhanced light extraction in III-nitride ultraviolet photonic crystal light-emitting diodes
    • Shakya J., Kim K. H., Lin J. Y., and Jiang H. X. "Enhanced light extraction in III-nitride ultraviolet photonic crystal light-emitting diodes" Appl. Phys. Lett. 85, 142 (2004)
    • (2004) Appl. Phys. Lett , vol.85 , pp. 142
    • Shakya, J.1    Kim, K.H.2    Lin, J.Y.3    Jiang, H.X.4
  • 402
    • 0942277773 scopus 로고    scopus 로고
    • Electron-beaminduced strain within InGaN quantum wells: False indium "cluster" detection in the transmission electron microscope
    • Smeeton T. M., Kappers M. J., Barnard J. S., Vickers M. E., and Humphreys C. J. "Electron-beaminduced strain within InGaN quantum wells: False indium "cluster" detection in the transmission electron microscope" Appl. Phys. Lett. 83, 5419 (2003)
    • (2003) Appl. Phys. Lett , vol.83 , pp. 5419
    • Smeeton, T.M.1    Kappers, M.J.2    Barnard, J.S.3    Vickers, M.E.4    Humphreys, C.J.5
  • 412
    • 0242666917 scopus 로고    scopus 로고
    • AlGaN multiple-quantum-well-based deep ultraviolet light-emitting diodes with significantly reduced long-wave emission
    • Zhang J. P., Wu S., Rai S., Mandavilli V., Adivarahan V., Chitnis A., Shatalov M., and Khan M. A. "AlGaN multiple-quantum-well-based deep ultraviolet light-emitting diodes with significantly reduced long-wave emission" Appl. Phys. Lett. 83, 3456 (2003)
    • (2003) Appl. Phys. Lett , vol.83 , pp. 3456
    • Zhang, J.P.1    Wu, S.2    Rai, S.3    Mandavilli, V.4    Adivarahan, V.5    Chitnis, A.6    Shatalov, M.7    Khan, M.A.8
  • 415
    • 0009076731 scopus 로고
    • Spontaneous emission and optical gain in a Fabry-Perot microcavity
    • Deppe D. G. and Lei C. "Spontaneous emission and optical gain in a Fabry-Perot microcavity" Appl. Phys. Lett. 60, 527 (1992)
    • (1992) Appl. Phys. Lett , vol.60 , pp. 527
    • Deppe, D.G.1    Lei, C.2
  • 416
    • 0028529526 scopus 로고
    • Color variation with electroluminescent organic semiconductors in multimode resonant cavities
    • Dodabalapur A., Rothberg L. J., and Miller T. M. "Color variation with electroluminescent organic semiconductors in multimode resonant cavities" Appl. Phys. Lett. 65, 2308 (1994)
    • (1994) Appl. Phys. Lett , vol.65 , pp. 2308
    • Dodabalapur, A.1    Rothberg, L.J.2    Miller, T.M.3
  • 417
    • 0001281097 scopus 로고
    • On the quantum theory of radiation
    • (translated from German)
    • Einstein A. "On the quantum theory of radiation" (translated from German) Z. Phys. 18, 121 (1917)
    • (1917) Z. Phys , vol.18 , pp. 121
    • Einstein, A.1
  • 418
    • 0001447488 scopus 로고
    • Theory and applications of a new interference method for spectroscopy
    • (translated from French)
    • Fabry G. and Perot A. "Theory and applications of a new interference method for spectroscopy" (translated from French) Ann. Chim. Phys. 16, 115 (1899)
    • (1899) Ann. Chim. Phys , vol.16 , pp. 115
    • Fabry, G.1    Perot, A.2
  • 420
    • 0014833735 scopus 로고
    • Junction lasers which operate continuously at room temperature
    • Hayashi I., Panish M. B., Foy P. W., and Sumski S. "Junction lasers which operate continuously at room temperature" Appl. Phys. Lett. 17, 109 (1970)
    • (1970) Appl. Phys. Lett , vol.17 , pp. 109
    • Hayashi, I.1    Panish, M.B.2    Foy, P.W.3    Sumski, S.4
  • 421
    • 0000432803 scopus 로고
    • Enhanced spectral power density and reduced linewidth at 1.3 μm in an InGaAsP quantum well resonant cavity light emitting diode
    • Hunt N. E. J., Schubert E. F., Logan R. A., and Zydzik G. J. "Enhanced spectral power density and reduced linewidth at 1.3 μm in an InGaAsP quantum well resonant cavity light emitting diode" Appl. Phys. Lett. 61, 2287 (1992)
    • (1992) Appl. Phys. Lett , vol.61 , pp. 2287
    • Hunt, N.E.J.1    Schubert, E.F.2    Logan, R.A.3    Zydzik, G.J.4
  • 422
    • 36449005163 scopus 로고
    • Increased fiber communications bandwidth from a resonant cavity light emitting diode emitting at λ = 940 nm
    • Hunt N. E. J., Schubert E. F., Kopf R. F., Sivco D. L., Cho A. Y., and Zydzik G. J. "Increased fiber communications bandwidth from a resonant cavity light emitting diode emitting at λ = 940 nm" Appl. Phys. Lett. 63, 2600 (1993)
    • (1993) Appl. Phys. Lett , vol.63 , pp. 2600
    • Hunt, N.E.J.1    Schubert, E.F.2    Kopf, R.F.3    Sivco, D.L.4    Cho, A.Y.5    Zydzik, G.J.6
  • 423
  • 429
    • 0001189074 scopus 로고
    • Organic photo-and electroluminescent devices with double mirrors
    • Nakayama T., Itoh Y., and Kakuta A. "Organic photo-and electroluminescent devices with double mirrors" Appl. Phys. Lett. 63, 594 (1993)
    • (1993) Appl. Phys. Lett , vol.63 , pp. 594
    • Nakayama, T.1    Itoh, Y.2    Kakuta, A.3
  • 430
    • 0027539457 scopus 로고
    • Indistinct threshold laser operation in a pnpn vertical to surface transmission electrophotonic device with a vertical cavity
    • Numai T., Kosaka H., Ogura I., Kurihara K., Sugimoto M., and Kasahara K. "Indistinct threshold laser operation in a pnpn vertical to surface transmission electrophotonic device with a vertical cavity" IEEE J. Quantum Electron. 29, 403 (1993)
    • (1993) IEEE J. Quantum Electron , vol.29 , pp. 403
    • Numai, T.1    Kosaka, H.2    Ogura, I.3    Kurihara, K.4    Sugimoto, M.5    Kasahara, K.6
  • 431
    • 0000752673 scopus 로고
    • Spontaneous emission probabilities at radio frequencies
    • Purcell E. M. "Spontaneous emission probabilities at radio frequencies" Phys. Rev. 69, 681 (1946)
    • (1946) Phys. Rev , vol.69 , pp. 681
    • Purcell, E.M.1
  • 439
    • 0001479023 scopus 로고
    • Observation of spontaneous emission lifetime change of dye-containing Langmuir−Blodgett films in optical microcavities
    • Suzuki M., Yokoyama H., Brorson S. D., and Ippen E. P. "Observation of spontaneous emission lifetime change of dye-containing Langmuir−Blodgett films in optical microcavities" Appl. Phys. Lett. 58, 998 (1991)
    • (1991) Appl. Phys. Lett , vol.58 , pp. 998
    • Suzuki, M.1    Yokoyama, H.2    Brorson, S.D.3    Ippen, E.P.4
  • 441
    • 0001689175 scopus 로고
    • Inhibited and enhanced spontaneous emission from optically thin AlGaAs / GaAs double heterostructures
    • Yablonovitch E., Gmitter T. J., and Bhat R. "Inhibited and enhanced spontaneous emission from optically thin AlGaAs / GaAs double heterostructures" Phys. Rev. Lett. 61, 2546 (1988)
    • (1988) Phys. Rev. Lett , vol.61 , pp. 2546
    • Yablonovitch, E.1    Gmitter, T.J.2    Bhat, R.3
  • 444
    • 36549101968 scopus 로고
    • Enhanced spontaneous emission from GaAs quantum wells in monolithic microcavities
    • Yokoyama H., Nishi K., Anan T., Yamada H., Boorson S.D., and Ippen E. P. "Enhanced spontaneous emission from GaAs quantum wells in monolithic microcavities" Appl. Phys. Lett. 57, 2814 (1990)
    • (1990) Appl. Phys. Lett , vol.57 , pp. 2814
    • Yokoyama, H.1    Nishi, K.2    Anan, T.3    Yamada, H.4    Boorson, S.D.5    Ippen, E.P.6
  • 445
    • 11944250627 scopus 로고
    • Physics and device applications of optical microcavities
    • Yokoyama H. "Physics and device applications of optical microcavities" Science 256, 66 (1992)
    • (1992) Science , vol.256 , pp. 66
    • Yokoyama, H.1
  • 446
    • 30144440988 scopus 로고    scopus 로고
    • GaInAsP/InP 2-dimensional photonic crystals
    • edited by J. Rarity and C. Weisbuch, (Kluwer Academic Publishers, Netherlands)
    • Baba T. and Matsuzaki T., "GaInAsP/InP 2-dimensional photonic crystals" in Microcavities and Photonic Bandgaps edited by J. Rarity and C. Weisbuch, p. 193 (Kluwer Academic Publishers, Netherlands, 1996)
    • (1996) Microcavities and Photonic Bandgaps , pp. 193
    • Baba, T.1    Matsuzaki, T.2
  • 447
    • 0029343817 scopus 로고
    • 16% external quantum efficiency from planar microcavity LED's at 940 nm by precise matching of the cavity wavelength
    • Blondelle J., De Neve H., Demeester P., Van Daele P., Borghs G., and Baets R. "16% external quantum efficiency from planar microcavity LED's at 940 nm by precise matching of the cavity wavelength" Electron. Lett. 31, 1286 (1995)
    • (1995) Electron. Lett , vol.31 , pp. 1286
    • Blondelle, J.1    De Neve, H.2    Demeester, P.3    Van Daele, P.4    Borghs, G.5    Baets, R.6
  • 451
    • 0001141291 scopus 로고    scopus 로고
    • High extraction efficiency of spontaneous emission from slabs of photonic crystals
    • Fan S., Villeneuve P. R., Joannopolous J. D., and Schubert E. F. "High extraction efficiency of spontaneous emission from slabs of photonic crystals" Phys. Rev. Lett. 78, 3294 (1997)
    • (1997) Phys. Rev. Lett , vol.78 , pp. 3294
    • Fan, S.1    Villeneuve, P.R.2    Joannopolous, J.D.3    Schubert, E.F.4
  • 453
    • 0029387542 scopus 로고
    • 3.2 μm infrared resonant cavity light emitting diode
    • Hadji E., Bleuse J., Magnea N., and Pautrat J. L. "3.2 μm infrared resonant cavity light emitting diode" Appl. Phys. Lett. 67, 2591 (1995)
    • (1995) Appl. Phys. Lett , vol.67 , pp. 2591
    • Hadji, E.1    Bleuse, J.2    Magnea, N.3    Pautrat, J.L.4
  • 455
    • 0000432803 scopus 로고
    • Enhanced spectral power density and reduced linewidth at 1.3 μm in an InGaAsP quantum well resonant-cavity light-emitting diode
    • Hunt N. E. J., Schubert E. F., Logan R. A., and Zydzik G. J. "Enhanced spectral power density and reduced linewidth at 1.3 μm in an InGaAsP quantum well resonant-cavity light-emitting diode" Appl. Phys. Lett. 61, 2287 (1992)
    • (1992) Appl. Phys. Lett , vol.61 , pp. 2287
    • Hunt, N.E.J.1    Schubert, E.F.2    Logan, R.A.3    Zydzik, G.J.4
  • 456
    • 36449005163 scopus 로고
    • Increased fiber communications bandwidth from a resonant cavity light-emitting diode emitting at λ = 940 nm
    • Hunt N. E. J., Schubert E. F., Kopf R. F., Sivco D. L., Cho A. Y., and Zydzik G. J. "Increased fiber communications bandwidth from a resonant cavity light-emitting diode emitting at λ = 940 nm" Appl. Phys. Lett. 63, 2600 (1993)
    • (1993) Appl. Phys. Lett , vol.63 , pp. 2600
    • Hunt, N.E.J.1    Schubert, E.F.2    Kopf, R.F.3    Sivco, D.L.4    Cho, A.Y.5    Zydzik, G.J.6
  • 457
  • 461
    • 0029345409 scopus 로고
    • Broadly tunable resonant-cavity light emission
    • Larson M. C. and Harris Jr. J. S. "Broadly tunable resonant-cavity light emission" Appl. Phys. Lett. 67, 590 (1995)
    • (1995) Appl. Phys. Lett , vol.67 , pp. 590
    • Larson, M.C.1    Harris, J.S.2
  • 462
    • 0029777103 scopus 로고    scopus 로고
    • Uniparabolic mirror grading for vertical cavity surface emitting lasers
    • Lear K. L. and Schneider Jr. R. P. "Uniparabolic mirror grading for vertical cavity surface emitting lasers" Appl. Phys. Lett. 68, 605 (1996)
    • (1996) Appl. Phys. Lett , vol.68 , pp. 605
    • Lear, K.L.1    Schneider, R.P.2
  • 466
    • 0001189074 scopus 로고
    • Organic photo-and electroluminescent devices with double mirrors
    • Nakayama T., Itoh Y., and Kakuta A. "Organic photo-and electroluminescent devices with double mirrors" Appl. Phys. Lett. 63, 594 (1993)
    • (1993) Appl. Phys. Lett , vol.63 , pp. 594
    • Nakayama, T.1    Itoh, Y.2    Kakuta, A.3
  • 468
    • 0030109445 scopus 로고    scopus 로고
    • Porous silicon resonant cavity light emitting diodes
    • Pavesi L., Guardini R., and Mazzoleni C. "Porous silicon resonant cavity light emitting diodes" Solid State Comm. 97, 1051 (1996)
    • (1996) Solid State Comm , vol.97 , pp. 1051
    • Pavesi, L.1    Guardini, R.2    Mazzoleni, C.3
  • 469
    • 36449003753 scopus 로고
    • Ultra-high spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures
    • Schnitzer I., Yablonovitch E., Caneau C., and Gmitter T. J. "Ultra-high spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures" Appl. Phys. Lett. 62, 131 (1993)
    • (1993) Appl. Phys. Lett , vol.62 , pp. 131
    • Schnitzer, I.1    Yablonovitch, E.2    Caneau, C.3    Gmitter, T.J.4
  • 476
    • 0038651825 scopus 로고
    • Vertical cavity surface emitting lasers with semitransparent metallic mirrors and high quantum efficiencies
    • Tu L. W., Schubert E. F., Zydzik G. J., Kopf R. F., Hong M., Chu S. N. G., and Mannaerts J. P. "Vertical cavity surface emitting lasers with semitransparent metallic mirrors and high quantum efficiencies" Appl. Phys. Lett. 57, 2045 (1990)
    • (1990) Appl. Phys. Lett , vol.57 , pp. 2045
    • Tu, L.W.1    Schubert, E.F.2    Zydzik, G.J.3    Kopf, R.F.4    Hong, M.5    Chu, S.N.G.6    Mannaerts, J.P.7
  • 478
    • 84975557376 scopus 로고
    • Resonant-cavity-enhanced thin-film AlGaAs/GaAs/AlGaAs LED's with metal mirrors
    • Wilkinson S. T., Jokerst N. M., and Leavitt R. P. "Resonant-cavity-enhanced thin-film AlGaAs/GaAs/AlGaAs LED's with metal mirrors" Appl. Opt. 34, 8298 (1995)
    • (1995) Appl. Opt , vol.34 , pp. 8298
    • Wilkinson, S.T.1    Jokerst, N.M.2    Leavitt, R.P.3
  • 481
    • 11944250627 scopus 로고
    • Physics and device applications of optical microcavities
    • Yokoyama H. "Physics and device applications of optical microcavities" Science 256, 66 (1992)
    • (1992) Science , vol.256 , pp. 66
    • Yokoyama, H.1
  • 482
    • 0037039865 scopus 로고    scopus 로고
    • Phototransduction by retinal ganglion cells that set the circadian clock
    • Berson D. M., Dunn F. A., and Takao M. "Phototransduction by retinal ganglion cells that set the circadian clock" Science 295, 1070 (2002)
    • (2002) Science , vol.295 , pp. 1070
    • Berson, D.M.1    Dunn, F.A.2    Takao, M.3
  • 484
    • 0037561598 scopus 로고    scopus 로고
    • Growth and fatty acid metabolism of human breast cancer (MCF-7) xenografts in nude rats: Impact of constant light-induced nocturnal melatonin suppression
    • Blask D. E., Dauchy R. T., Sauer L. A., Krause J. A., Brainard G. C. "Growth and fatty acid metabolism of human breast cancer (MCF-7) xenografts in nude rats: Impact of constant light-induced nocturnal melatonin suppression" Breast Cancer Research and Treatment 79, 313 (2003)
    • (2003) Breast Cancer Research and Treatment , vol.79 , pp. 313
    • Blask, D.E.1    Dauchy, R.T.2    Sauer, L.A.3    Krause, J.A.4    Brainard, G.C.5
  • 486
    • 84923543095 scopus 로고
    • Sec. 4, Bureau Central de la CIE, Paris
    • CIE Proceedings 1, Sec. 4; 3, p. 37; Bureau Central de la CIE, Paris (1951)
    • (1951) Proceedings , vol.1 , Issue.3 , pp. 37
    • CIE1
  • 487
    • 85032403263 scopus 로고
    • CIE data of 1931 and 1978 available at http://cvision.ucsd.edu and http://www.cvrl.org (1978).
    • (1978)
    • CIE data of 1931 and 19781
  • 489
    • 0018016384 scopus 로고
    • Colorimetric and photometric properties of a 2-deg fundamental observer
    • J. J. Vos "Colorimetric and photometric properties of a 2-deg fundamental observer" Color Res. Appl. 3, 125 (1978)
    • (1978) Color Res. Appl , vol.3 , pp. 125
    • Vos, J.J.1
  • 494
    • 0037039784 scopus 로고    scopus 로고
    • Melanopsin-containing retinal ganglion cells: Architecture, projections, and intrinsic photosensitivity
    • Hattar S., Liao H.-W., Takao M., Berson D. M., and Yau K.-W. "Melanopsin-containing retinal ganglion cells: Architecture, projections, and intrinsic photosensitivity" Science 295, 1065 (2002)
    • (2002) Science , vol.295 , pp. 1065
    • Hattar, S.1    Liao, H.-W.2    Takao, M.3    Berson, D.M.4    Yau, K.-W.5
  • 495
    • 0006275946 scopus 로고
    • Maximum attainable luminous efficiency of various chromaticities
    • MacAdam D. L. "Maximum attainable luminous efficiency of various chromaticities" J. Opt. Soc. Am. 40, 120 (1950)
    • (1950) J. Opt. Soc. Am , vol.40 , pp. 120
    • McAdam, D.L.1
  • 497
    • 0027349267 scopus 로고
    • Temporal organization: Reflections of a Darwinian clock-watcher
    • Pittendrigh C. S. "Temporal organization: Reflections of a Darwinian clock-watcher" Ann. Rev. Physiol. 55, 17 (1993)
    • (1993) Ann. Rev. Physiol , vol.55 , pp. 17
    • Pittendrigh, C.S.1
  • 499
    • 84923640422 scopus 로고    scopus 로고
    • The author of this book noticed in 1997 that working after 8 PM under bright illumination conditions in the office allowed him to fall asleep only very late, typically after midnight. The origin of sleeplessness was traced back to high-intensity office lighting conditions
    • Schubert E. F. The author of this book noticed in 1997 that working after 8 PM under bright illumination conditions in the office allowed him to fall asleep only very late, typically after midnight. The origin of sleeplessness was traced back to high-intensity office lighting conditions. Once the high intensity of the office lighting was reduced, the sleeplessness vanished (1997)
    • (1997) Once the high intensity of the office lighting was reduced, the sleeplessness vanished
    • Schubert, E.F.1
  • 501
    • 0018016384 scopus 로고
    • Colorimetric and photometric properties of a 2-deg fundamental observer
    • Vos J. J. "Colorimetric and photometric properties of a 2-deg fundamental observer" Color Res. Appl. 3, 125 (1978)
    • (1978) Color Res. Appl , vol.3 , pp. 125
    • Vos, J.J.1
  • 505
    • 85032407464 scopus 로고
    • CIE data of 1931 and 1978 available at http://cvision.ucsd.edu and http://www.cvrl.org (1978)
    • (1978)
    • CIE data of 1931 and 19781
  • 508
    • 0004163466 scopus 로고
    • (CIE, Vienna, Austria) CIE publication No. 15 (E.1.3.1) 1971: Colorimetry; this publication was updated in 1986 to CIE Publication 15.2
    • CIE publication No. 15 (E.1.3.1) 1971: Colorimetry; this publication was updated in 1986 to CIE Publication 15.2 Colorimetry (CIE, Vienna, Austria, 1986)
    • (1986) Colorimetry
  • 510
    • 0001946172 scopus 로고
    • Report of US Secretariat Committee on Colorimetry and Artificial Daylight
    • (Bureau Central de la CIE, Paris)
    • th Session of the CIE 1, p. 11 (Bureau Central de la CIE, Paris, 1951)
    • (1951) th Session of the CIE , vol.1 , pp. 11
    • Judd, D.B.1
  • 511
    • 0001905702 scopus 로고
    • Specification of small chromaticity differences
    • MacAdam D. L. "Specification of small chromaticity differences" J. Opt. Soc. Am. 33, 18 (1943)
    • (1943) J. Opt. Soc. Am , vol.33 , pp. 18
    • McAdam, D.L.1
  • 512
    • 33144477688 scopus 로고
    • (Editor), (SPIE Optical Engineering Press, Bellingham, Washington)
    • MacAdam D. L. (Editor) Colorimetry-Fundamentals (SPIE Optical Engineering Press, Bellingham, Washington, 1993)
    • (1993) Colorimetry-Fundamentals
    • McAdam, D.L.1
  • 513
    • 84923569164 scopus 로고    scopus 로고
    • Light-emitting diodes-An introduction
    • edited by John G. Webster, (John Wiley and Sons, New York, March)
    • Schubert E. F. and Miller J. N "Light-emitting diodes-An introduction" Encyclopedia of Electrical Engineering, edited by John G. Webster, Vol. 11, p. 326 (John Wiley and Sons, New York, March 1999)
    • (1999) Encyclopedia of Electrical Engineering , vol.11 , pp. 326
    • Schubert, E.F.1    Miller, J.N.2
  • 514
    • 0018016384 scopus 로고
    • Colorimetric and photometric properties of a 2-degree fundamental observer
    • Vos J. J. "Colorimetric and photometric properties of a 2-degree fundamental observer" Color Res. Appl. 3, 125 (1978)
    • (1978) Color Res. Appl , vol.3 , pp. 125
    • Vos, J.J.1
  • 516
    • 0037907192 scopus 로고
    • The graphical representation of small color differences
    • Wright W. D. "The graphical representation of small color differences" J. Opt. Soc. Am. 33, 632 (1943)
    • (1943) J. Opt. Soc. Am , vol.33 , pp. 632
    • Wright, W.D.1
  • 518
    • 84889324236 scopus 로고    scopus 로고
    • Organic electroluminescent devices for solid-state lighting
    • edited by Z. H. Kafafi (Taylor & Francis Group, Boca Raton, Florida)
    • Duggal A. R. "Organic electroluminescent devices for solid-state lighting" in Organic Electroluminescence edited by Z. H. Kafafi (Taylor & Francis Group, Boca Raton, Florida, 2005)
    • (2005) Organic Electroluminescence
    • Duggal, A.R.1
  • 520
    • 0347348555 scopus 로고    scopus 로고
    • Photometric standards
    • Chapter 3, (Optical Society of America, Washington DC)
    • Ohno Y. "Photometric standards" Chapter 3 in OSA/AIP Handbook of Applied Photometry, 55 (Optical Society of America, Washington DC, 1997)
    • (1997) OSA/AIP Handbook of Applied Photometry , vol.55
    • Ohno, Y.1
  • 522
    • 0000713956 scopus 로고
    • On the theory of the law on energy distribution in the normal spectrum (translated from German)
    • Planck M. "On the theory of the law on energy distribution in the normal spectrum (translated from German)" Verhandlungen der Deutschen Physikalischen Gesellschaft 2, 237 (1900)
    • (1900) Verhandlungen der Deutschen Physikalischen Gesellschaft , vol.2 , pp. 237
    • Planck, M.1
  • 523
    • 0000531480 scopus 로고
    • Computation of correlated color temperature and distribution temperature
    • Robertson R. "Computation of correlated color temperature and distribution temperature" J. Opt. Soc. Am. 58, 1528 (1968)
    • (1968) J. Opt. Soc. Am , vol.58 , pp. 1528
    • Robertson, R.1
  • 525
    • 84984331118 scopus 로고
    • Survey of color order systems
    • Billmeyer Jr. F. W. "Survey of color order systems" Color Res. Appl. 12, 173 (1987)
    • (1987) Color Res. Appl , vol.12 , pp. 173
    • Billmeyer, F.W.1
  • 526
    • 84975514324 scopus 로고
    • this publication was updated in 1986 to CIE Publication 15.2 Colorimetry (CIE, Vienna, Austria)
    • CIE publication No. 15 (E.1.3.1) 1971: Colorimetry this publication was updated in 1986 to CIE Publication 15.2 Colorimetry (CIE, Vienna, Austria, 1986)
    • (1986) Colorimetry
    • CIE publication No. 15 (E.1.3.1) 1971:1
  • 528
    • 84889324236 scopus 로고    scopus 로고
    • Organic electroluminescent devices for solid-state lighting
    • edited by Z. H. Kafafi (Taylor and Francis Group, Boca Raton, Florida)
    • Duggal A. R. "Organic electroluminescent devices for solid-state lighting" in Organic Electroluminescence edited by Z. H. Kafafi (Taylor and Francis Group, Boca Raton, Florida, 2005)
    • (2005) Organic Electroluminescence
    • Duggal, A.R.1
  • 529
    • 0006770540 scopus 로고    scopus 로고
    • available to the public from National Technical Information Service (NTIS), US Department of Commerce, 5285 Port Royal Road, Springfield, Virginia 22161
    • Kendall M. and Scholand M. Energy Savings Potential of Solid State Lighting in General Lighting Applications available to the public from National Technical Information Service (NTIS), US Department of Commerce, 5285 Port Royal Road, Springfield, Virginia 22161 (2001)
    • (2001) Energy Savings Potential of Solid State Lighting in General Lighting Applications
    • Kendall, M.1    Scholand, M.2
  • 530
    • 7744246273 scopus 로고    scopus 로고
    • 2nd ring-bound edition (Fairchild Books and Visuals, New York)
    • Long J. and Luke J. T. The New Munsell Student Color Set 2nd ring-bound edition (Fairchild Books and Visuals, New York, 2001)
    • (2001) The New Munsell Student Color Set
    • Long, J.1    Luke, J.T.2
  • 531
    • 33144477688 scopus 로고
    • (Editor), (SPIE Optical Engineering Press, Bellingham, Washington)
    • MacAdam D. L. (Editor) Colorimetry-Fundamentals (SPIE Optical Engineering Press, Bellingham, Washington, 1993)
    • (1993) Colorimetry-Fundamentals
    • McAdam, D.L.1
  • 533
    • 84914332555 scopus 로고    scopus 로고
    • Matte Edition, through GretagMacbeth Corporation, gretagmacbeth.com and munsell.com (Regensdorf, Switzerland)
    • Munsell Munsell Book of Color, Matte Edition is available through GretagMacbeth Corporation, gretagmacbeth.com and munsell.com (Regensdorf, Switzerland, 2005)
    • (2005) Munsell Book of Color
    • Munsell1
  • 536
    • 0035577028 scopus 로고    scopus 로고
    • The promise and challenges of solid-state lighting
    • (December)
    • Bergh A., Craford G., Duggal A., and Haitz R. "The promise and challenges of solid-state lighting" Physics Today p. 42 (December 2001)
    • (2001) Physics Today , pp. 42
    • Bergh, A.1    Craford, G.2    Duggal, A.3    Haitz, R.4
  • 537
    • 20444454215 scopus 로고    scopus 로고
    • Influence of junction temperature on chromaticity and color rendering properties of trichromatic white light sources based on lightemitting diodes
    • Chhajed S., Xi Y., Li Y.-L., Gessmann Th., and Schubert E. F. "Influence of junction temperature on chromaticity and color rendering properties of trichromatic white light sources based on lightemitting diodes" J. Appl. Phys. 97, 054506 (2005)
    • (2005) J. Appl. Phys , vol.97
    • Chhajed, S.1    Xi, Y.2    Li, Y.-L.3    Gessmann, T.4    Schubert, E.F.5
  • 538
    • 84889324236 scopus 로고    scopus 로고
    • Organic electroluminescent devices for solid-state lighting
    • edited by Z. H. Kafafi (Taylor & Francis Group, Boca Raton, Florida)
    • Duggal A. R. "Organic electroluminescent devices for solid-state lighting" in Organic Electroluminescence edited by Z. H. Kafafi (Taylor & Francis Group, Boca Raton, Florida, 2005)
    • (2005) Organic Electroluminescence
    • Duggal, A.R.1
  • 540
    • 0033347306 scopus 로고    scopus 로고
    • Photon-recycling semiconductor light-emitting diodes
    • IEDM-99
    • Guo X., Graff J. W., and Schubert E. F. "Photon-recycling semiconductor light-emitting diodes" IEDM Technol. Dig., IEDM-99, 600 (1999)
    • (1999) IEDM Technol. Dig , pp. 600
    • Guo, X.1    Graff, J.W.2    Schubert, E.F.3
  • 541
    • 0042600204 scopus 로고
    • Color and efficiency of luminescent light sources
    • Ivey H. F. "Color and efficiency of luminescent light sources" J. Opt. Soc. Am. 53, 1185 (1963)
    • (1963) J. Opt. Soc. Am , vol.53 , pp. 1185
    • Ivey, H.F.1
  • 542
    • 0041422330 scopus 로고    scopus 로고
    • Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths
    • Li Y.-L., Gessmann Th., Schubert E. F., and Sheu J. K. "Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths" J. Appl. Phys. 94, 2167 (2003)
    • (2003) J. Appl. Phys , vol.94 , pp. 2167
    • Li, Y.-L.1    Gessmann, T.2    Schubert, E.F.3    Sheu, J.K.4
  • 543
    • 19744374735 scopus 로고    scopus 로고
    • Solid-state light sources becoming smart
    • Schubert E. F. and Kim J. K. "Solid-state light sources becoming smart" Science 308, 1274 (2005)
    • (2005) Science , vol.308 , pp. 1274
    • Schubert, E.F.1    Kim, J.K.2
  • 544
    • 0036540216 scopus 로고    scopus 로고
    • Whitelight emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn co-doped active well layer
    • Sheu J. K., Pan C. J., Chi G. C., Kuo C. H., Wu L. W., Chen C. Chang H., S. J., and Su Y. K. "Whitelight emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn co-doped active well layer" IEEE Photonics Technol. Lett., 14, 450 (2002)
    • (2002) IEEE Photonics Technol. Lett , vol.14 , pp. 450
    • Sheu, J.K.1    Pan, C.J.2    Chi, G.C.3    Kuo, C.H.4    Wu, L.W.5    Chen, C.6    Chang, H.S.J.7    Su, Y.K.8
  • 545
    • 0015113091 scopus 로고
    • Luminosity and color rendering capability of white light
    • Thornton W. A. "Luminosity and color rendering capability of white light" J. Opt. Soc. Am. 61, 1155 (1971)
    • (1971) J. Opt. Soc. Am , vol.61 , pp. 1155
    • Thornton, W.A.1
  • 552
    • 0033347306 scopus 로고    scopus 로고
    • Photon-recycling semiconductor light-emitting diode
    • IEDM-99
    • Guo X., Graff J. W., and Schubert E. F. "Photon-recycling semiconductor light-emitting diode" IEDM Technical Digest, IEDM-99, 600 (1999)
    • (1999) IEDM Technical Digest , pp. 600
    • Guo, X.1    Graff, J.W.2    Schubert, E.F.3
  • 555
    • 0042600204 scopus 로고
    • Color and efficiency of luminescent light sources
    • Ivey H. F. "Color and efficiency of luminescent light sources" J. Opt. Soc. Am. 53, 1185 (1963)
    • (1963) J. Opt. Soc. Am , vol.53 , pp. 1185
    • Ivey, H.F.1
  • 557
    • 0001946172 scopus 로고
    • Report of US secretariat committee on colorimetry and artificial daylight
    • (Bureau central de la CIE, Paris)
    • Judd D. B. "Report of US secretariat committee on colorimetry and artificial daylight" in Proceedings of the Twelfth Session of the CIE, Stockholm Vol. 1, p. 11 (Bureau central de la CIE, Paris, 1951)
    • (1951) Proceedings of the Twelfth Session of the CIE, Stockholm , vol.1 , pp. 11
    • Judd, D.B.1
  • 558
    • 0038076292 scopus 로고    scopus 로고
    • New developments in the field of luminescent materials for lighting and displays
    • Justel T., Nikol H., and Ronda C. R. "New developments in the field of luminescent materials for lighting and displays" Angewandte Chemie (International Edition) 37, 3084 (1998)
    • (1998) Angewandte Chemie (International Edition) , vol.37 , pp. 3084
    • Justel, T.1    Nikol, H.2    Ronda, C.R.3
  • 562
    • 21344473633 scopus 로고    scopus 로고
    • Strongly enhanced phosphor efficiency in GaInN white light-emitting diodes using remote phosphor configuration and diffuse reflector cup
    • Kim J. K., Luo H., Schubert E. F., Cho J., Sone C., and Park Y. "Strongly enhanced phosphor efficiency in GaInN white light-emitting diodes using remote phosphor configuration and diffuse reflector cup" Jpn. J. Appl. Phys.-Express Letter 44, L 649 (2005)
    • (2005) Jpn. J. Appl. Phys.-Express Letter , vol.44
    • Kim, J.K.1    Luo, H.2    Schubert, E.F.3    Cho, J.4    Sone, C.5    Park, Y.6
  • 563
    • 21344442442 scopus 로고    scopus 로고
    • Analysis of high-power packages for phosphor-based white-light-emitting diodes
    • Luo H., Kim J. K., Schubert E. F., Cho J., Sone C., and Park Y. "Analysis of high-power packages for phosphor-based white-light-emitting diodes" Appl. Phys. Lett. 86, 243505 (2005)
    • (2005) Appl. Phys. Lett , vol.86
    • Luo, H.1    Kim, J.K.2    Schubert, E.F.3    Cho, J.4    Sone, C.5    Park, Y.6
  • 564
    • 0006275946 scopus 로고
    • Maximum attainable luminous efficiency of various chromaticities
    • MacAdam D. L. "Maximum attainable luminous efficiency of various chromaticities" J. Opt. Soc. Am. 40, 120 (1950)
    • (1950) J. Opt. Soc. Am , vol.40 , pp. 120
    • McAdam, D.L.1
  • 570
  • 573
    • 15744368242 scopus 로고    scopus 로고
    • High CRI phosphor blends for near UV LED lamps
    • Radkov E., Setlur A., Brown Z., and Reginelli J. "High CRI phosphor blends for near UV LED lamps" Proc. SPIE 5530, 260 (2003)
    • (2003) Proc. SPIE , vol.5530 , pp. 260
    • Radkov, E.1    Setlur, A.2    Brown, Z.3    Reginelli, J.4
  • 576
    • 0031125188 scopus 로고    scopus 로고
    • Luminescence conversion of blue light emitting diodes
    • Schlotter P., Schmidt R., and Schneider J. "Luminescence conversion of blue light emitting diodes" Appl. Phys. A 64, 417 (1997)
    • (1997) Appl. Phys. A , vol.64 , pp. 417
    • Schlotter, P.1    Schmidt, R.2    Schneider, J.3
  • 577
    • 0033528942 scopus 로고    scopus 로고
    • Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs
    • Schlotter P., Baur J., Hielscher C., Kunzer M., Obloh H., Schmidt R., and Schneider J. "Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs" Materials Sci. Eng. B59, 390 (1999)
    • (1999) Materials Sci. Eng , vol.B59 , pp. 390
    • Schlotter, P.1    Baur, J.2    Hielscher, C.3    Kunzer, M.4    Obloh, H.5    Schmidt, R.6    Schneider, J.7
  • 580
    • 0015113091 scopus 로고
    • Luminosity and color-rendering capability of white light
    • Thornton W. A. "Luminosity and color-rendering capability of white light" J. Opt. Soc. Am. 61, 1155 (1971)
    • (1971) J. Opt. Soc. Am , vol.61 , pp. 1155
    • Thornton, W.A.1
  • 581
    • 0018016384 scopus 로고
    • Colorimetric and photometric properties of a 2-degree fundamental observer
    • Vos, J. J. "Colorimetric and photometric properties of a 2-degree fundamental observer" Color Res. Appl. 3, 125 (1978)
    • (1978) Color Res. Appl , vol.3 , pp. 125
    • Vos, J.J.1
  • 582
    • 0015054272 scopus 로고
    • Optimum phosphor blends for fluorescent lamps
    • Walter W. "Optimum phosphor blends for fluorescent lamps" Appl. Opt. 10, 1108 (1971)
    • (1971) Appl. Opt , vol.10 , pp. 1108
    • Walter, W.1
  • 584
    • 4544316379 scopus 로고    scopus 로고
    • Wireless infrared communications
    • edited by J. G. Proakis (John Wiley and Sons, New York)
    • Carruthers J. B. "Wireless infrared communications" in Wiley Encyclopedia of Telecommunications edited by J. G. Proakis (John Wiley and Sons, New York, 2002)
    • (2002) Wiley Encyclopedia of Telecommunications
    • Carruthers, J.B.1
  • 586
    • 0004127788 scopus 로고    scopus 로고
    • (Prentice Hall, Upper Saddle River, New Jersey)
    • Hecht J. Understanding Fiber Optics (Prentice Hall, Upper Saddle River, New Jersey, 2001)
    • (2001) Understanding Fiber Optics
    • Hecht, J.1
  • 587
    • 0031070220 scopus 로고    scopus 로고
    • Wireless infrared communications
    • Kahn J. M. and Barry J. R. "Wireless infrared communications" Proc. IEEE 85, 265 (2001)
    • (2001) Proc. IEEE , vol.85 , pp. 265
    • Kahn, J.M.1    Barry, J.R.2
  • 592
    • 0001060007 scopus 로고
    • Small-area double heterostructure AlGaAs electroluminescent diode sources for optical fiber transmission lines
    • Burrus C. A. and Miller B. I. "Small-area double heterostructure AlGaAs electroluminescent diode sources for optical fiber transmission lines" Opt. Commun. 4, 307 (1971)
    • (1971) Opt. Commun , vol.4 , pp. 307
    • Burrus, C.A.1    Miller, B.I.2
  • 593
    • 84923535466 scopus 로고    scopus 로고
    • Passive components tested by superluminescent diodes"
    • February issue of
    • Liu Y. "Passive components tested by superluminescent diodes" February issue of WDM Solutions p. 41 (2000)
    • (2000) WDM Solutions , pp. 41
    • Liu, Y.1
  • 596
    • 0000828797 scopus 로고
    • Photoelectrochemical etching of integral lenses on GaInPAs/InP light-emitting diodes
    • Ostermayer Jr. F. W., Kohl P. A., and Burton R. H. "Photoelectrochemical etching of integral lenses on GaInPAs/InP light-emitting diodes" Appl. Phys. Lett. 43, 642 (1983)
    • (1983) Appl. Phys. Lett , vol.43 , pp. 642
    • Ostermayer, F.W.1    Kohl, P.A.2    Burton, R.H.3
  • 598
    • 0003326429 scopus 로고    scopus 로고
    • Enhancement of spontaneous emission in microcavities
    • edited by C. Wilmsen, H. Temkin, and L. A. Coldren (Cambridge University Press, Cambridge, UK)
    • Schubert E. F. and Hunt N. E. J. "Enhancement of spontaneous emission in microcavities" in Vertical Cavity Surface Emitting Lasers edited by C. Wilmsen, H. Temkin, and L. A. Coldren (Cambridge University Press, Cambridge, UK, 1999)
    • (1999) Vertical Cavity Surface Emitting Lasers
    • Schubert, E.F.1    Hunt, N.E.J.2
  • 601
    • 0032164555 scopus 로고    scopus 로고
    • 250 Mbit/s plastic fibre transmission using 660 nm resonant cavity light emitting diode
    • Streubel K. and Stevens R. "250 Mbit/s plastic fibre transmission using 660 nm resonant cavity light emitting diode" Electron. Lett. 34, 1862 (1998)
    • (1998) Electron. Lett , vol.34 , pp. 1862
    • Streubel, K.1    Stevens, R.2
  • 603
    • 0347038773 scopus 로고    scopus 로고
    • Resonant cavity LEDs
    • (May)
    • Whitaker T. "Resonant cavity LEDs" Compound Semiconductors 5 (4), 32 (May 1999)
    • (1999) Compound Semiconductors , vol.5 , Issue.4 , pp. 32
    • Whitaker, T.1
  • 605
    • 0017514809 scopus 로고
    • Design parameters of frequency response of GaAs-AlGaAs DH LEDs for optical communications
    • Ikeda K., Horiuchi S., Tanaka T., and Susaki W. "Design parameters of frequency response of GaAs-AlGaAs DH LEDs for optical communications" IEEE Trans. Electron Dev. ED-24, 1001 (1977)
    • (1977) IEEE Trans. Electron Dev , vol.ED-24 , pp. 1001
    • Ikeda, K.1    Horiuchi, S.2    Tanaka, T.3    Susaki, W.4
  • 606
    • 0016434252 scopus 로고
    • Effect of junction capacitance on the rise time of LEDs and on the turn-on delay of injection lasers
    • Lee T. P. "Effect of junction capacitance on the rise time of LEDs and on the turn-on delay of injection lasers" Bell Syst. Tech. J. 54, 53 (1975)
    • (1975) Bell Syst. Tech. J , vol.54 , pp. 53
    • Lee, T.P.1
  • 610
    • 0017959486 scopus 로고
    • Closed-form calculation of the transient behavior of (AlGa)As double heterojunction LEDs
    • Zucker J. "Closed-form calculation of the transient behavior of (AlGa)As double heterojunction LEDs" J. Appl. Phys. 49, 2543 (1978)
    • (1978) J. Appl. Phys , vol.49 , pp. 2543
    • Zucker, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.