Photoluminescence measurement of the facet temperature of 1 W gain-guided AlGaAs/GaAs laser diodes

Journal of Applied Physics

Volumn 80, Issue 11, 1996, Pages 6547-6549

  Rommel, J M ^a,b   Gavrilovic, P ^a   Dabkowski, F P ^a  

^a POLAROID CORPORATION   (United States)

^b BOSTON COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CLADDING (COATING); HEAT SINKS; INORGANIC COATINGS; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE MEASUREMENT; THERMAL EFFECTS;

ALUMINUM GALLIUM ARSENIDE; FACET TEMPERATURE;

OPTICAL VARIABLES MEASUREMENT;

EID: 0030422480     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363675     Document Type: Article

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