Advances in selective wet oxidation of AlGaAs alloys

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 3, 1997, Pages 916-925

  Choquette, Kent D ^a,b   Geib, Kent M ^b   Ashby, Carol I H ^b   Twesten, Ray D ^b   Blum, Olga ^b   Hou, Hong Q ^a,b   Follstaedt, David M ^b   Hammons, B Eugene ^b   Mathes, Dave ^c   Hull, Robert ^c  

^a IEEE   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c University of Virginia   (United States)

Author keywords

Materials processing; Materials science and technology; Optoelectronic device; Semiconductor device fabrication; Semiconductor lasers

Indexed keywords

ACTIVATION ENERGY; ALUMINA; ALUMINUM ALLOYS; COMPOSITION EFFECTS; HYDROGEN; OPTOELECTRONIC DEVICES; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS;

SELECTIVE WET OXIDATION; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031153123     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.640645     Document Type: Article

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