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Volumn 95, Issue 12, 2005, Pages

Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency

(7) Hangleiter, A a Hitzel, F a Netzel, C a Fuhrmann, D a Rossow, U a Ade, G b Hinze, P b

a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG (Germany)

b PHYSIKALISCH TECHNISCHE BUNDESANSTALT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY BARRIER; GAINN; GROWTH CONDITIONS;

CRYSTAL DEFECTS; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMISSION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 27144482123 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.95.127402 Document Type: Article

Times cited : (404)

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