Indium tin oxide contacts to gallium nitride optoelectronic devices

Applied Physics Letters

Volumn 74, Issue 26, 1999, Pages 3930-3932

  Margalith, T ^a   Buchinsky, O ^a   Cohen, D A ^a   Abare, A C ^a   Hansen, M ^a   DenBaars, S P ^a   Coldren, L A ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CONTACTS; ELECTROLUMINESCENCE; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

GALLIUM NITRIDE; INDIUM TIN OXIDE (ITO);

LIGHT EMITTING DIODES;

EID: 0032620316     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124227     Document Type: Article

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