Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes

Journal of Applied Physics

Volumn 94, Issue 4, 2003, Pages 2627-2630

  Shah, Jay M ^a   Li, Y L ^a   Gessmann, Th ^a   Schubert, E F ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SUPERLATTICES;

JUNCTION DIODES;

SEMICONDUCTOR DIODES;

EID: 0042924379     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1593218     Document Type: Article

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