Universal bandgap bowing in group-III nitride alloys

Solid State Communications

Volumn 127, Issue 6, 2003, Pages 411-414

  Wu, J ^a,b   Walukiewicz, W ^b   Yu, K M ^b   Ager III, J W ^b   Li, S X ^b,c   Haller, E E ^b,c   Lu, Hai ^d   Schaff, William J ^d  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c Lawrence Berkeley National Laboratory   (United States)

^d Cornell University   (United States)

Author keywords

A. Semiconductors; D. Optical properties; E. Light absorption and reflection

Indexed keywords

ENERGY GAP; LIGHT ABSORPTION; LIGHT REFLECTION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS;

BANDGAP VARIATIONS;

NITRIDES;

EID: 0042697044     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(03)00457-5     Document Type: Article

References (20)

1. Nakamura S. J. Cryst. Growth. 202:1999;290.
2. Strite S., Morkoc H. J. Vac. Sci. Technol. B. 10:1992;1237.
3. Zhang X., Kung P., Saxler A., Walker D., Wang T.C., Razeghi M. Appl. Phys. Lett. 67:1995;1745.
4. Wu J., Walukiewicz W., Yu K.M., Ager J.W. III, Haller E.E., Lu H., Schaff W.J., Saito Y., Nanishi Y. Appl. Phys. Lett. 80:2002;3967.
5. Davydov V.Y., Klochikhin A.A., Emtsev V.V., Ivanov S.V., Vekshin V.V., Bechstedt F., Furthmler J., Harima H., Mudryi A.V., Hashimoto A., Yamamoto A., Aderhold J., Graul J., Haller E.E. Phys. Status Solidi (b). 230:2002;R4.
6. Wu J., Walukiewicz W., Yu K.M., Ager J.W. III, Haller E.E., Lu H., Schaff W.J. Appl. Phys. Lett. 80:2002;4741.
7. Kim K.S., Saxler A., Kung P., Razeghi M., Lim Y. Appl. Phys. Lett. 71:1997;800.
8. Yamaguchi S., Kariya M., Nitta S., Takeuchi T., Wetzel C., Amano H., Akasaki I. Appl. Phys. Lett. 76:2000;876.
9. Lu H., Schaff W.J., Hwang J., Wu H., Koley G., Eastman L.F. Appl. Phys. Lett. 79:2001;1489.
10. Wright A.F., Nelson J.S. Appl. Phys. Lett. 66:1995;3465.
11. Shan W., Ager J.W. III, Yu K.M., Walukiewicz W., Haller E.E., Martin M.C., McKinney W.R., Yang W. J. Appl. Phys. 85:1999;8507.
12. Brunner D., Angerer H., Bustarret E., Freudenberg F., Höpler R., Dimitrov R., Ambacher O., Stutzmann M. J. Appl. Phys. 82:1997;5090.
13. Paduano Q.S., Weyburne D.W., Bouthillette L.O., Wang S.-Q., Alexander M.N. Jpn. J. Appl. Phys., Part 1. 41:2002;1936.
14. Lee S.R., Wright A.F., Crawford M.H., Petersen G.A., Han J., Biefeld R.M. Appl. Phys. Lett. 74:1999;3344.
15. Vurgaftman I., Meyer J.R., Ram-Mohan L.R. J. Appl. Phys. 89:2001;5815.
16. Pereira S., Correia M.R., Monteiro T., Pereira E., Alves E., Sequeira A.D., Franco N. Appl. Phys. Lett. 78:2001;2137.
17. Shan W., Walukiewicz W., Haller E.E., Little B.D., Song J.J., McCluskey M.D., Johnson N.M., Feng Z.C., Schurman M., Stall R.A. J. Appl. Phys. 84:1998;4452.
18. Van Vechten J.A., Bergstresser T.K. Phys. Rev. B. 1:1970;3351.
19. Martin G., Botchkarev A., Rockett A., Morkoc H. Appl. Phys. Lett. 68:1996;2541.
20. See, e.g. Hsu L., Walukiewicz W. J. Appl. Phys. 89:2001;1783.