Deep ultraviolet LEDs fabricated in AlInGaN using MEMOCVD

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5530, Issue , 2004, Pages 224-230

  Khan, M Asif ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

AlGaN; Flip chip; LED; Micro pixel; MOCVD; Packaging; Ultraviolet

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC RESISTANCE; ELECTRONICS PACKAGING; FLIP CHIP DEVICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES; ULTRAVIOLET RADIATION; VOLTAGE CONTROL;

ALGAN; LIGHT EXTRACTION; MEMOCVD; MICRO-PIXEL; THERMAL MANAGEMENT;

LIGHT EMITTING DIODES;

EID: 15744392988     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.567108     Document Type: Conference Paper

References (13)

1. J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, G. Simin, J. W. Yang, M. Asif Khan, "Milliwatt Power Deep Ultraviolet Light Emitting Diodes over Sapphire with Emission at 278 nm", Appl. Phys. Lett. 81, 4910 (2002).
2. A. Hanlon, P. M. Pattison, J. F. Kaeding, R. Sharma, P. Fini, S. Nakamura, "292nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base", Jpn. J. Appl. Phys. 42, L628 (2003).
3. A. Yasan, R. McClintock, K. Mayes, D. Shiell, L. Gautero, S. R. Darvish, P. Kung, M. Razeghi, "4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes", Appl. Phys. Lett. 83, 4701 (2003).
4. J. Zhang, W. Shuai, S. Rai, V. Mandavilli, V. Adivarahan, A. Chitnis, M. Shatalov, M. Asif Khan, "AlGaN Multiple Quantum Well Based Deep Ultraviolet Light-Emitting Diodes with Significantly Reduced Long-wave Emission",Appl. Phys. Lett. 83, 3456 (2003).
5. D. Morita, M. Sano, M. Yamamoto, T. Murayama, S. Nagahama, T. Mukai, "High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure", Jpn. J. Appl. Phys. 41 L1434 (2003).
6. J. P. Zhang, H. M. Wang, M. E. Gaevski, C. Q. Chen, Q. Fareed, J. W. Yang, G. Simin, M. A. Khan, "Crack-free thick AlGaN grown on sapphire using AIN/AlGaN supperlattice for strain management", Appl. Phys. Lett. 80 3542 (2002).
7. J. P. Zhang, M. Asif Khan, W. H. Sun, H. M. Wang, C. Q. Chen, Q. Fareed, E. Kuokstis, J. W. Yang, "Pulsed Atomic Layer Epitaxy of Ultrahigh-Quality AlxGal-xN structures for Deep Ultraviolet Emissions below 230 nm", Appl. Phys. Lett. 81 4392 (2002).
8. M. S. Shur, A. D. Bykhovski, R. Gaska, J. W. Yang, G. Simin, M. A. Khan, "Accumulation hole layer in p-GaN/AlGaN heterostructures", Appl. Phys. Lett. 76 3061 (2000).
9. M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, A. D. Bykhovski, "Piezoelectric doping in AlInGaN/GaN heterostructures", Appl. Phys. Lett. 75 2806 (1999).
10. X. Guo, E. F. Schubert, "Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates", Appl. Phys. Lett., 78, 3337 (2001).
11. M. Shatalov, G. Simin, V. Adivarahan, A. Chitnis, S. Wu, R. Pachipulusu, K. Simin, J. P. Zhang, J. W. Yang, M. Asif Khan, "Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates", Jpn. J. Appl. Phys. 41, 5083 (2002).
12. A. Chitnis, V. Adivarahan, M. Shatalov, J. P. Zhang, M. Gaevski, Wu Shuai, R. Pachipulusu, J. Sun, K. Simin, G. Simin, J. W. Yang, M. Asif Khan, "Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate", Jpn. J. Appl. Phys. 41, L320 (2002).
13. A. Chitnis, J. Sun, V. Mandavilli, R. Pachipulusu, S. Wu, M. Gaevski, V. Adivarahan, J. P. Zhang, M. Asif Khan, A. Sarua, M. Kuball, "Self-Heating Effects at High Pump Currents in Deep UV Light Emitting Diodes at 325nm", Appl. Phys. Lett. 81, 3491 (2002).