High-efficiency resonant-cavity LEDs emitting at 650 nm

IEEE Photonics Technology Letters

Volumn 13, Issue 5, 2001, Pages 421-423

  Wirth, R ^a   Karnutsch, C ^a   Kugler, S ^a   Streubel, K ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

Data communication; Light emitting diode; Microresonators; Optoelectronic devices

Indexed keywords

DATA COMMUNICATION SYSTEMS; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; OPTICAL RESONATORS; PHOTOLUMINESCENCE; RESONANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM ARSENIDE; DISTRIBUTED BRAGG REFLECTORS; GALLIUM INDIUM PHOSPHIDE; RESONANT CAVITY LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 0035335514     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.920737     Document Type: Article

References (9)

1. Temperature and modulation characteristics of resonant-cavity light-emitting diodes
2. Realization and characterization of 8 × 8 resonant cavity LED arrays mounted onto CMOS drives for POF-based interchip interconnections
3. 250 Mbit/s plastic optical fiber transmission using 660 nm resonant cavity light emitting diodes
4. Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth
5. AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates
6. High brightness visible (660 nm) resonant cavity light emitting diodes
7. Recycling of guided mode light emission in planar microcavity light emitting diodes
8. Impact of planar microcavity effects on light extraction-Part I: Basic concepts and analytical trends
9. Resonant cavity light-emitting diode