Enhancement of deep acceptor activation in semiconductors by superlattice doping

Applied Physics Letters

Volumn 69, Issue 24, 1996, Pages 3737-3739

  Schubert, E F ^a   Grieshaber, W ^a   Goepfert, I D ^a  

^a Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000043971     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117206     Document Type: Article

References (9)

1. R. F. Davis, Physica B 185, 1 (1993).
2. H. Markoç and S. Strite, J. Vac. Sci. Technol. B 10, 1237 (1992).
3. E. F. Schubert, Doping in III-V Semiconductors (Cambridge University Press, Cambridge, United Kingdom, 1993), p. 123.
4. 0.
5. C. Mailhiot, Y. C. Chang, and T. C. Mc Gill, Phys. Rev. B 26, 4449 (1982).
6. The assistance of the Center for Computational Science at Boston University is acknowledged.
7. r=9.0.
8. a) are therefore taken to be constant, i.e., independent of the composition. Impurity activation energies in ternary III-V nitrides were reviewed in Ref. 2. More experimental data would be required to take into account the possible composition dependence of the acceptor activation energy. The corrections to the results presented here would, however, be minor.
9. E. F. Schubert, L. W. Tu, G. J. Zydzik, R. F. Kopf, A. Benvenuti, and M. R. Pinto, Appl. Phys. Lett. 60, 466 (1992).