Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths

Journal of Applied Physics

Volumn 94, Issue 4, 2003, Pages 2167-2172

  Li, Y L ^a   Gessmann, Th ^a   Schubert, E F ^a   Sheu, J K ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC EXCITATION; ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT EMISSION; LOW TEMPERATURE EFFECTS; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTOR JUNCTIONS;

CARRIER DYNAMICS;

LIGHT EMITTING DIODES;

EID: 0041422330     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1591051     Document Type: Article

References (16)

1. S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997), pp. 216-219.
2. R. Mueller-Mach, G. Mueller, M. Krames, and T. Trottier, IEEE J. Sel. Top. Quantum Electron. 8, 339 (2002).
3. P. Schlotter, R. Schmidt, and J. Schneider, Appl. Phys. A: Mater. Sci. Process. 64, 417 (1997).
4. X. Quo, J. W. Graff, and E. F. Schubert, Tech. Dig. Int. Electron Devices Meet, IEDM-99, 600 (1999).
5. D. L. MacAdam, J. Opt. Soc. Am. 40, 120 (1950).
6. H. F. Ivey, J. Opt. Soc. Am. 53, 1185 (1963).
7. G. Wyszecki and W. S. Stiles, Color Science: Concepts and Methods, Quantitative Data and Formulae (Wiley, New York, 1982).
8. W. A. Thornton, J. Opt. Soc. Am. 61, 1155 (1971).
9. P. Lefebvre, J. Allègre, B. Gil, A. Kavokine, H. Mathieu, W. Kim, A. Salvador, A. Botchkarev, and Hadis Morkoç, Phys. Rev. B 57, R9447 (1998).
10. S.-W. Feng, Y.-C. Cheng, Y.-Y. Chung, C. C. Yang, Y.-S. Lin, C. Hsu, K.-J. Ma, and J.-I. Chyi, J. Appl. Phys. 92, 4441 (2002).
11. J. F. Muth, J. D. Brown, M. A. L. Johnson, Z. Yu, R. M. Kolbas, J. W. Cook, Jr., and J. F. Schetzina, MRS Internet J. Nitride Semicond, Res. 4S1, G5. 2 (1999).
12. M. Yamada, Y. Narukawa, and T. Mukai, Jpn. J. Appl. Phys., Part 2 41, L246 (2002).
13. E. F. Schubert, Light-Emitting Diodes (Cambridge University Press, Cambridge, U.K., 2003).
14. D. K. Schroder, IEEE Trans. Electron Devices 44, 160 (1997).
15. X. Guo and E. F. Schubert, J. Appl. Phys. 90, 4191 (2001).
16. S. Dalmasso, B. Damilano, C. Pernot, A. Dussaigne, D. Byrne, N. Grandjean, M. Leroux, and J. Massies, Phys. Status Solidi A 192, 139 (2002).