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Volumn 10, Issue 4, 2002, Pages 271-286

AlGaN and InAlGaN alloys - Epitaxial growth, optical and electrical properties, and applications

Author keywords

AlGaN alloys; AlN epilayers; InAlGaN alloys; Light emitters; Time resolved photoluminescence

Indexed keywords


EID: 0347371752     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (55)

References (69)
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    • (2002) Appl. Phys. Lett. , vol.80 , pp. 2907
  • 18
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    • edited by J.H. Edgar, S. Strite, I. Akssaki, H. Amano, and C. Wetzel
    • M.D. Bremser, Gallium Nitride and Related Semiconductors, edited by J.H. Edgar, S. Strite, I. Akssaki, H. Amano, and C. Wetzel, p. 147.
    • Gallium Nitride and Related Semiconductors , pp. 147
    • Bremser, M.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.