Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices

Journal of Applied Physics

Volumn 80, Issue 8, 1996, Pages 4615-4620

  Grieshaber, W ^a   Schubert, E F ^a   Goepfert, I D ^a   Karlicek Jr , R F ^b   Schuman, M J ^b   Tran, C ^b  

^a Boston University   (United States)

^b EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DIFFERENTIAL EQUATIONS; ELECTRON TRANSITIONS; ENERGY GAP; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; ULTRAVIOLET RADIATION;

BIMOLECULAR RECOMBINATION; EXCITATION DENSITY; GALLIUM NITRIDE; RATE EQUATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030264903     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363443     Document Type: Article

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