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Volumn 14, Issue 13, 2002, Pages 3399-3434

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

(12) Ambacher, O a Majewski, J a Miskys, C a Link, A a Hermann, M a Eickhoff, M a Stutzmann, M a Bernardini, F b Fiorentini, V b Tilak, V c Schaff, B c Eastman, L F c

a WALTER SCHOTTKY INSTITUT (Germany)

b UNIVERSITY OF CAGLIARI (Italy)

c Department of Materials Science and Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC FIELD EFFECTS; ELECTRON GAS; GALLIUM NITRIDE; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MULTILAYERS; OPTICAL PROPERTIES; POLARIZATION; PYROELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM NITRIDE; NITRIDE TERNARY ALLOYS; PYROELECTRIC POLARIZATION; TWO DIMENSIONAL ELECTRON GASES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0037041115 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/14/13/302 Document Type: Article

Times cited : (1031)

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