Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

Applied Physics Letters

Volumn 84, Issue 6, 2004, Pages 855-857

  Fujii, T ^a,b   Gao, Y ^a   Sharma, R ^a   Hu, E L ^a   DenBaars, S P ^a,b   Nakamura, S ^a,b  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ANNEALING; EPITAXIAL GROWTH; ETCHING; GALLIUM NITRIDE; LASER APPLICATIONS; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS; ULTRAVIOLET RADIATION;

EPITAXIAL LAYERS; LASER LIFT OFF TECHNIQUE; PHOTOELECTROCHEMICAL ETCHING;

LIGHT EMITTING DIODES;

EID: 1542315187     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1645992     Document Type: Article

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