AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology

Applied Physics Letters

Volumn 75, Issue 2, 1999, Pages 154-156

  Horng, R H ^a   Wuu, D S ^a   Wei, S C ^a   Huang, M F ^b   Chang, K H ^b   Liu, P H ^b   Lin, K C ^b  

^a DA YEH UNIVERSITY   (Taiwan)

^b Visual Photonics Epitaxy Co Ltd   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GOLD COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GLASS; SEMICONDUCTOR GROWTH; SUBSTRATES;

WAFER BONDING TECHNIQUES;

LIGHT EMITTING DIODES;

EID: 0032622032     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124303     Document Type: Article

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