Understanding GaN nucleation layer evolution on sapphire

Journal of Crystal Growth

Volumn 273, Issue 1-2, 2004, Pages 86-99

  Koleske, D D ^a   Coltrin, M E ^a   Cross, K C ^a   Mitchell, C C ^a   Allerman, A A ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

A1. crystal morphology; A1. Desorption; A1. Nucleation; A1. Recrystallization; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

AMMONIA; ATOMIC FORCE MICROSCOPY; CRYSTALS; DESORPTION; GALLIUM NITRIDE; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; OPTICAL PROPERTIES; RECRYSTALLIZATION (METALLURGY); SAPPHIRE;

CRYSTAL MORPHOLOGY; DECOMPOSITION KINETICS; NUCLEATION LAYERS (NL); OPTICAL REFLECTANCE;

NUCLEATION;

EID: 9944222393     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.126     Document Type: Article

References (51)

1. W.C. Johnson, J.B. Parsons, M.C. Crew, J. Phys. Chem. 36 (1932) 2651.
2. T. Sasaki, S. Zembutsu, J. Appl. Phys. 61 (1987) 2533.
3. X.L. Xu, C.D. Beling, S. Fung, Y.W. Zhao, N.F. Sun, T.N. Sun, Q.L. Zhang, H.H. Zhan, B.Q. Sun, J.N. Wang, W.K. Ge, P.C. Wong, Appl. Phys. Lett. 76 (2000) 152.
4. J.W.P. Hsu, D.V. Lang, S. Richter, R.N. Kleiman, A.M. Sergent, R.J. Molnar, Appl. Phys. Lett. 77 (2000) 2873.
5. H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, Appl. Phys. Lett. 48 (1986) 353.
6. In 1983, Yoshida and coworkers used 300 nm thick high-temperature, T, AlN layers between the sapphire substrates and the top layer GaN film to improve the film quality, see S. Yoshida, S. Misawa, S. Gonda, Appl. Phys. Lett. 42 (1983) 427.
7. D.K. Wickenden, T.J. Kistenmacher, W.A. Bryden, J.S. Morgan, A.E. Wickenden, Mater. Res. Soc. Symp. Proc. 221 (1991) 167.
8. S. Nakamura, Jpn. J. Appl. Phys. 30 (1991) L1705.
9. S. Nakamura, T. Mukai, M. Senoh, J. Appl. Phys. 71 (1992) 5543.
10. S. Nakamura, N. Senoh, N. Iwasa, S.I. Nagahama, Jpn. J. Appl. Phys. Part II 34 (1995) L797.
11. D.D. Koleske, A.E. Wickenden, R.L. Henry, W.J. DeSisto, R.J. Gorman, J. Appl. Phys. 84 (1998) 1998.
12. J.N. Kuznia, M.A. Khan, D.T. Olson, R. Kaplan, J. Freitas, J. Appl. Phys. 73 (1993) 4700.
13. T. Ito, M. Sumiya, Y. Takano, K. Ohtsuka, S. Fuke, Jpn. J. Appl. Phys. Part 1 38 (1999) 649.
14. T. Wang, T. Shirahama, H.B. Sun, H.X. Wang, J. Bai, S. Sakai, H. Misawa, Appl. Phys. Lett. 75 (2000) 2220.
15. S. Fuke, H. Teshigawara, Kazuhiro Kuwahara, Y. Takano, T. Ito, M. Yanagihara, K. Ohtsuka, J. Appl. Phys. 83 (1998) 764.
16. M.S. Yi, H.H. Lee, D.J. Kim, S.J. Park, D.Y. Noh, C.C. Kim, J.H. Je, Appl. Phys. Lett. 75 (1999) 2187.
17. C.-Y. Hwang, M.J. Schurman, W.E. Mayo, Y. Li, Y. Lu, H. Liu, T. Salagaj, R.A. Stall, J. Vac. Sci. Technol. A 13 (1995) 672.
18. S.D. Hersee, J. Ramer, K. Zheng, C. Kranenberg, K. Malloy, M. Banas, M. Goorsky, J. Electron. Mater. 24 (1995) 1519.
19. S. Keller, D. Kapolnek, B.P. Keller, Y. Wu, B. Keying, J.S. Speck, U.K. Mishra, S.P. Denbaars, Jpn J. Appl. Phys. Part 2 35 (1996) L285.
20. K.S. Kim, C.S. Oh, K.J. Lee, G.M. Yang, C.-H. Hong, K.Y. Lim, H.J. Lee, J. Appl. Phys. 85 (1999) 8441.
21. J.C. Ramer, I. Zheng, C.F. Kranenberg, M. Banas, S.D. Hersee, Mater. Res. Soc. Symp. Proc. 395 (1996) 225.
22. C.F. Lin, G.C. Chi, M.S. Feng, J.D. Guo, J.S. Tsang, J.M. Hong, Appl. Phys. Lett. 68 (1996) 3758.
23. S. Chu, K. Fujimura, D. Suzuki, S. Sakakibara, F. Tanoue, A. Ishida, K. Ishino, K. Aiki, H. Fujiyasu, J. Crystal Growth 189-190 (1998) 340.
24. D.-S. Wuu, R.-H. Horng, W.-H. Tseng, W.-T. Lin, C.-Y. Kung, J. Crystal Growth 220 (2000) 235.
25. S. Keller, B.P. Keller, Y.-F. Wu, B. Heying, D. Kapolnek, J.S. Speck, U.K. Mishra, S.P. DenBaars, Appl. Phys. Lett. 68 (1996) 1525.
26. A.E. Wickenden, D.K. Wickenden, T.J. Kistenmacher, J. Appl. Phys. 75 (1994) 5367.
27. X.H. Wu, D. Kapolnek, E.J. Tarsa, B. Heying, S. Keller, B.P. Keller, U.K. Mishra, S.P. DenBaars, J.S. Speck, Appl. Phys. Lett. 68 (1996) 1371.
28. A. Munkholm, C. Thompson, C.M. Foster, J.A. Eastman, O. Auciello, G.B. Stephenson, P. Fini, S.P. DenBaars, J.S. Speck, Appl. Phys. Lett. 72 (1998) 2972.
29. K. Lorenz, M. Gonsalves, W. Kim, V. Narayanan, S. Mahajan, Appl. Phys. Lett. 77 (2000) 3391.
30. M. Lada, A.G. Cullis, P.J. Parbrook, J. Crystal Growth 258 (2003) 89.
31. V. Narayanan, K. Lorenz, W. Kim, S. Mahajan, Philos. Mag. A 82 (2002) 885.
32. L. Sugiura, K. Itaya, J. Nishio, H. Fujimoto, Y. Kokubun, J. Appl. Phys. 82 (1997) 4877.
33. W.M. Tong, R.S. Williams, Ann. Rev. Phys. Chem. 45 (1994) 401.
34. C. Herring, J. Appl. Phys. 21 (1950) 301.
35. M. Kardar, G. Parisi, Y.C. Zhang, Phys. Rev. Lett. 56 (1986) 889.
36. D.E. Wolf, J. Villain, Europhys. Lett. 13 (1990) 389.
37. While the exponent assignments for n have been successfully applied to explain smoothing mechanisms in many studies, smoothing mechanisms other than the ones proposed by Herring have been proposed when measured value of n does not relate physically to the mechanisms derived by Herring, see A.J. Flewitt, J. Robertson, W.I. Milne, J. Appl. Phys. 85 (1999) 8032. For the GaN NL evolution presented here, the surface diffusion (n = 4) and the evaporation and recondensation (n = 2) mechanisms make both physical and mechanistic sense.
38. J. Han, T.-B. Ng, R.M. Biefeld, M.H. Crawford, D.M. Follstaedt, Appl. Phys. Lett. 71 (1997) 3114.
39. S. Figge, T. Bottcher, S. Einfeldt, D. Hommel, J. Crystal Growth 221 (2000) 262.
40. T. Yang, K. Uchida, T. Mishima, J. Kasai, J. Gotoh, Phys. Stat. Sol. (a) 180 (2000) 45.
41. I. Halidou, T. Boufaden, A. Touhami, A. Rebey, B.E. Jani, Phys. Stat. Sol. (a) 184 (2001) 263.
42. R.S. Balmer, C. Pickering, A.J. Pidduck, T. Martin, J. Crystal Growth 245 (2002) 198.
43. D.D. Koleske, A.J. Fischer, A.A. Allerman, C.C. Mitchell, K.C. Cross, S.R. Kurtz, J.J. Figiel, K.W. Fullmer, W.G. Breiland, Appl. Phys. Lett. 81 (2002) 1940.
44. D.D. Koleske, M.E. Coltrin, A.A. Allerman, K.C. Cross, C.C. Mitchell, J.J. Figiel, Appl. Phys. Lett. 82 (2003) 1170.
45. J.C. Stover, Optical Scattering: Measurement and Analysis, SPIE - The International Society for Optical Engineering, Bellingham, WA, 1995.
46. D.E. Aspnes, J.B. Theeten, F. Hottier, Phys. Rev. B 20 (1979) 3292.
47. W.G. Breiland, K.P. Killeen, J. Appl. Phys. 78 (1995) 6726.
48. D.D. Koleske, A.E. Wickenden, R.L. Henry, J.C. Culbertson, M.E. Twigg, J. Crystal Growth 223 (2001) 466.
49. C.C. Mitchell, M.E. Coltrin, J. Han, J. Crystal Growth 222 (2001) 144.
50. S. Nitta, M. Kariya, T. Kashima, S. Yamaguchi, H. Amano, I. Akasaki, Appl. Surf. Sci. 159-160 (2000) 421.
51. S. Heikman, S.P. DenBaars, U.K. Mishra, Jpn. J. Appl. Phys. Part 1 40 (2001) 565.