Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 390-394

  Schlotter, P ^a   Baur, J ^a   Hielscher, Ch ^a   Kunzer, M ^a   Obloh, H ^a   Schmidt, R ^a   Schneider, J ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPOXY RESINS; ETCHING; HETEROJUNCTIONS; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

CONTACT METALLIZATION; ION BEAM ETCHING; LUMINESCENCE CONVERSION; QUASI MONOCHROMATIC LIGHT;

LIGHT EMITTING DIODES;

EID: 0033528942     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00352-3     Document Type: Article

References (5)

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3. Schlotter P., Schmidt R., Schneider J. Appl. Phys. A. 64:1997;417.
4. Baur J., Schlotter P., Schneider J. Festkörperprobleme. Adv. Solid State Phys. 37:1998;67.
5. Nakamura S., Fasol G. The Blue Laser Diode, GaN Based Light Emitters and Lasers. 1997;216-221 Springer, Berlin.